Panasonic MA3V176E, MA3V175E Datasheet

Switching Diodes

MA3V175E, MA3V176E

Silicon epitaxial planar type

For switching circuits

4.0 ± 0.2

Unit : mm

■ Features

•

Short reverse recovery time t

•

Small terminal capacitance, C

rr

t

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage

(DC)

Peak reverse

voltage

Forward current

(DC)

Peak forward

current

Non-repetitive peak

forward surge current

MA3V175E

MA3V176E

MA3V175E

MA3V176E

Single I

Double 150

Single I

Double 340

Single I

*

Double 750

Junction temperature T

Storage temperature T

V

V

FM

FSM

R

RM

F

j

−55 to +150 °C

stg

100 mA

225 mA

500 mA

150 °C

Note) * : t = 1 s

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC)

Forward voltage (DC) V

Reverse voltage (DC)

Terminal capacitance C

Reverse recovery time

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

Rs = 50 Ω
V = V

+ I

R

MA3V175E

MA3V176E

MA3V175E

MA3V176E

*

R·RS

DUT

I

I

R

F

V

R

t

t

rr

F

3.0 ± 0.215.6 ± 0.5

40 V

80

40 V

80

marking

123

1.271.27

+ 0.2

− 0.1

0.45

2.54 ± 0.15

0.7 ± 0.1

2.0 ± 0.2

1 : Anode
2 : Cathode
3 : Anode

New S-Type Package

Internal Connection

1 32

VR = 35 V 0.1 µA

VR = 75 V 0.1

IF = 100 mA 1.2 V

IR = 100 µA40V

80

VR = 0 V, f = 1 MHz 4 pF

IF = 10 mA, VR = 6 V 3 ns

Irr = 0.1 · IR, RL = 100Ω

Sampling
Oscilloscope
R

= 50 Ω

i

Input Pulse

trt

P

10%

90%

t

= 100 ns

p

t

= 0.6 ns

r

δ

= 0.05

I

F

0

Output Pulse

t

rr

= 10 mA

I

F

V

= 6 V

R

R

= 100 Ω

L

I

= 0.1·I

rr

t

R

1

MA3V175E, MA3V176E

Switching Diodes

IF  V

3

10

2

10

)

mA
(

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

 T

1.2

1.0

)
V

(

0.8

F

0.6

0.4

Forward voltage V

0.2

Ta = 125°C

a

IF = 10 mA

75°C

25°C

− 20°C

)

3 mA

1 mA

0.1 mA

IR  V

2

10

10

)
µA

(

R

1

−1

10

Reverse current I

−2

10

−3

10

0 20406080100120

R

MA3V175E

Ta = 125°C

75°C

25°C

Reverse voltage VR (V

IR  T

2

10

10

)
µA

(

R

1

VR = 40 V

−1

10

Reverse current I

−2

10

a VF

MA3V175E

20 V

IR  V

IR  T

VR = 80 V

R

MA3V176E

)

a

MA3V176E

40 V

2

10

Ta = 125°C

10

)
µA

(

R

1

−1

10

Reverse current I

−2

10

−3

10

0 20406080100120

)

2

10

10

)

µA

(

R

1

−1

10

Reverse current I

−2

10

75°C

25°C

Reverse voltage VR (V

0

−40 0 40 80 120 160

Ambient temperature Ta (°C

Ct  V

10

8

6

)

4

pF
(

t

2

1

0.8

0.6

0.4

Terminal capacitance C

0.2

10

08124 16202428323640

Reverse voltage VR (V

2

R

f = 1 MHz

= 25°C

T

a

)

−3

10

−40 0 40 80 120 160

)

Ambient temperature Ta (°C

)

−3

10

−40 0 40 80 120 160

Ambient temperature Ta (°C

)