Panasonic MA3V175E, MA3V176E User Manual
查询MA176WK供应商查询MA176WK供应商
Switching Diodes
MA3V175E, MA3V176E (MA175WK, MA176WK)
Silicon epitaxial planar type
For switching circuits
■ Features
•
Short reverse recovery time t
•
Small terminal capacitance, C
Unit : mm
(0.8)(0.8)
3.0±0.2
2.0
±0.2
7.6
4.0±0.2
0.75 max.
rr
t
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage
(DC)
Peak reverse
voltage
Forward current
(DC)
Peak forward
current
Non-repetitive peak
forward surge current
MA3V175E
MA3V176E
MA3V175E
MA3V176E
Single I
Double 150
Single I
Double 340
Single I
*
Double 750
Junction temperature T
Storage temperature T
V
V
FM
FSM
R
RM
F
j
−55 to +150 °C
stg
100 mA
225 mA
500 mA
150 °C
Note) * : t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC) V
Reverse voltage (DC)
Terminal capacitance C
Reverse recovery time
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
MA3V175E
MA3V176E
MA3V175E
MA3V176E
*
Rs = 50 Ω
+ I
V = V
R
R·RS
DUT
I
R
F
V
R
t
t
rr
I
F
15.6±0.5
40 V
80
40 V
80
0.45
+0.20
–0.10
(2.5) (2.5)
231
+0.20
0.45
–0.10
0.7
±0.1
1 : Anode
2 : Cathode
3 : Anode
NS-B1 Package
Internal Connection
1 32
VR = 35 V 0.1 µA
VR = 75 V 0.1
IF = 100 mA 1.2 V
IR = 100 µA40V
80
VR = 0 V, f = 1 MHz 4 pF
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 · IR, RL = 100Ω
Sampling
Oscilloscope
R
= 50 Ω
i
Input Pulse
trt
P
10%
90%
t
= 100 ns
p
t
= 0.6 ns
r
δ
= 0.05
I
0
Output Pulse
F
I
F
V
R
t
rr
I
= 10 mA
= 6 V
R
= 100 Ω
L
= 0.1·I
rr
t
R
180
Note) The part numbers in the parenthesis show conventional part number.
Switching Diodes
MA3V175E, MA3V176E
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
T
1.2
1.0
)
V
(
0.8
F
0.6
0.4
Forward voltage V
0.2
Ta = 125°C
a
IF = 10 mA
75°C
25°C
− 20°C
)
3 mA
1 mA
0.1 mA
IR V
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 20406080100120
R
MA3V175E
Ta = 125°C
75°C
25°C
Reverse voltage VR (V
IR T
2
10
10
)
µA
(
R
1
VR = 40 V
−1
10
Reverse current I
−2
10
a VF
MA3V175E
20 V
IR V
IR T
VR = 80 V
R
MA3V176E
)
a
MA3V176E
40 V
2
10
Ta = 125°C
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 20406080100120
)
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
75°C
25°C
Reverse voltage VR (V
0
−40 0 40 80 120 160
Ambient temperature Ta (°C
Ct V
10
8
6
)
4
pF
(
t
2
1
0.8
0.6
0.4
Terminal capacitance C
0.2
10
08124 16202428323640
R
Reverse voltage VR (V
f = 1 MHz
= 25°C
T
a
)
−3
10
−40 0 40 80 120 160
)
Ambient temperature Ta (°C
)
−3
10
−40 0 40 80 120 160
Ambient temperature Ta (°C
)
181
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