Panasonic MA3V176D, MA3V175D Datasheet

Switching Diodes

4.0 ± 0.2

marking

2.54 ± 0.15

1.271.27

3.0 ± 0.215.6 ± 0.5

2.0 ± 0.2

0.7 ± 0.1

0.45

+ 0.2

− 0.1

123

MA3V175D, MA3V176D

Silicon epitaxial planar type

For switching circuits

■ Features

•

Short reverse recovery time t

•

Small terminal capacitance, C

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage

(DC)

Peak reverse

voltage

Forward current

(DC)

Peak forward

current

Non-repetitive peak

forward surge current

Junction temperature T

Storage temperature T

Note) * : t = 1 s

MA3V175D

MA3V176D

MA3V175D

MA3V176D

Single I

Double 150

Single I

Double 340

Single I

*

Double 750

rr

t

V

R

40 V

80

V

RM

40 V

80

F

FM

FSM

j

stg

100 mA

225 mA

500 mA

150 °C

−55 to +150 °C

Unit : mm

1 : Cathode
2 : Anode
3 : Cathode

New S-Type Package

Internal Connection

1 32

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC)

Forward voltage (DC) V

Reverse voltage (DC)

Terminal capacitance C

Reverse recovery time

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

Rs = 50 Ω
V = V

+ IR·R

R

MA3V175D

MA3V176D

MA3V175D

MA3V176D

*

S

DUT

I

I

R

VR = 35 V 0.1 µA

VR = 75 V 0.1

IF = 100 mA 1.2 V

F

V

IR = 100 µA40V

R

80

VR = 0 V, f = 1 MHz 4 pF

t

t

rr

IF = 10 mA, VR = 6 V 10 ns

Irr = 0.1 · IR, RL = 100 Ω

Input Pulse

trt

P

Sampling
Oscilloscope
R

= 50 Ω

F

i

10%

90%

t

= 100 ns

p

t

= 0.6 ns

r

δ

= 0.05

I

F

0

Output Pulse

t

rr

= 10 mA

I

F

V

= 6 V

R

R

= 100 Ω

L

I

= 0.1·I

rr

t

R

1

MA3V175D, MA3V176D

Switching Diodes

IF  V

3

10

2

10

)

mA
(

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

 T

1.2

1.0

)

V

(

0.8

F

0.6

0.4

Forward voltage V

0.2

Ta = 125°C

a

IF = 10 mA

75°C

25°C

− 20°C

)

3 mA
1 mA

0.1 mA

IR  V

10

1

)
µA

(

R

−1

10

−2

10

Reverse current I

−3

10

−4

10

Ta = 125°C

0 102030405060

R

MA3V175D

75°C

25°C

Reverse voltage VR (V

IR  T

10

1

)
µA

(

R

−1

10

−2

10

Reverse current I

−3

10

a VF

MA3V175D

VR = 40 V

20 V

IR  V

IR  T

R

MA3V176D

)

a

MA3V176D

40 V

10

Ta = 125°C

1

)
µA

(

R

−1

10

−2

10

Reverse current I

−3

10

−4

10

0 20406080100120

)

10

1

)
µA

(

R

−1

10

−2

10

Reverse current I

−3

10

75°C

25°C

Reverse voltage VR (V

VR = 80 V

0

−40 0 40 80 120 160

Ambient temperature Ta (°C

 V

10

8

6

)

4

pF

(

t

2

1

0.8

0.6

0.4

Terminal capacitance C

0.2

10

08124 16202428323640

Ct

Reverse voltage VR (V

2

R

f = 1 MHz

= 25°C

T

a

)

−4

10

)

−40 0 40 80 120 160

Ambient temperature Ta (°C

)

−4

10

−40 0 40 80 120 160

Ambient temperature Ta (°C

)