Panasonic MA3U760 Datasheet
Schottky Barrier Diodes (SBD)
MA3U760
Silicon epitaxial planar type (cathode common)
For switching power supply
6.5 ± 0.1
5.3 ± 0.1
4.35 ± 0.1
Unit : mm
2.3 ± 0.1
0.5 ± 0.1
■ Features
•
Small U-type package and surface mounting
•
High breakdown voltage V
•
Low forward rise voltage V
•
Cathode common dual type
R
F
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
RRM
FSM
−40 to +125 °C
j
−40 to +125 °C
stg
Note) * : Half sine-wave: 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Thermal resistance
*
Note) 1. Rated input/output frequency: 1 000 MHz
2. * : TC = 25°C
R
R
F
th(j-c)
1.8 ± 0.1
7.3 ± 0.1
1.0 ± 0.1
0.8 max.
0.75 ± 0.1
0.1 ± 0.05
0.5 ± 0.1
1 : Anode
2 : Cathode
(Common)
3 : Anode
U-Type Package
90 V
5A
40 A
0.93 ± 0.1
2.5 ± 0.1
123
4.6 ± 0.1
2.3 ± 0.1
VR = 90 V, TC = 25°C 1.0 mA
IF = 2.5 A, TC = 25°C 0.85 V
Between junction and case 12.5 °C/W
1.0 ± 0.2
1
MA3U760
Schottky Barrier Diodes (SBD)
IF V
4
10
Ta = 125°C
3
10
)
mA
(
F
2
10
10
Forward current I
1
−1
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
75°C 25°C
− 20°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
VR = 90 V
30 V
10 V
VF T
Ct V
a
R
IF = 5 A
2.5 A
1 A
f = 1 MHz
= 25°C
T
a
)
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
400
)
pF
300
(
t
200
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 20406080100120
IR V
R
Ta = 125°C
Reverse voltage VR (V
75°C
25°C
)
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
100
Terminal capacitance C
0
)
0 20406080100120
Reverse voltage VR (V
)
2
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