Panasonic MA3U755 Datasheet
Schottky Barrier Diodes (SBD)
MA3U755
Silicon epitaxial planar type (cathode common)
For switching power supply
■ Features
•
Small U-type package and allowing surface mounting
•
Low forward rise voltage V
•
Cathode common dual type
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note) * : Half sine-wave: 10 ms/cycle
*
F
V
F(AV)
RRM
FSM
j
stg
60 V
5A
40 A
−40 to +125 °C
−40 to +125 °C
1.8 ± 0.1
7.3 ± 0.1
0.93 ± 0.1
2.5 ± 0.1
123
6.5 ± 0.1
5.3 ± 0.1
4.35 ± 0.1
2.3 ± 0.1
4.6 ± 0.1
0.8 max.
0.75 ± 0.1
1.0 ± 0.1
2.3 ± 0.1
0.1 ± 0.05
0.5 ± 0.1
1 : Anode
2 : Cathode
(Common)
3 : Anode
U-Type Package
Unit : mm
0.5 ± 0.1
1.0 ± 0.2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Thermal resistance
*
Note) Rated input/output frequency: 1 000 MHz
*:TC = 25°C
R
R
F
th(j-c)
VR = 60 V, TC = 25°C 1.0 mA
IF = 2.5 A, TC = 25°C 0.58 V
Between junction and case 12.5 °C/W
1
MA3U755
Schottky Barrier Diodes (SBD)
IF V
4
10
75°C 25°C
Ta = 125°C
3
10
)
mA
(
F
2
10
10
Forward current I
1
−1
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
− 20°C
Forward voltage VF (V
IR T
a
VR = 60 V
)
(
mA
R
2
10
10
1
−1
10
30 V
10 V
VF T
Ct V
a
IF = 2.5 A
1 A
100 mA
R
f = 1 MHz
T
= 25°C
a
)
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
800
700
)
pF
600
(
t
500
400
300
2
10
10
)
mA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 102030405060
IR V
R
Ta = 125°C
Reverse voltage VR (V
75°C
25°C
)
Reverse current I
−2
10
−3
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
200
Terminal capacitance C
100
0
0 102030405060
)
Reverse voltage VR (V
)
2
Loading...