Panasonic MA3U689 Datasheet

Fast Recovery Diodes (FRD)
MA3U689
Silicon planar type
For high-frequency rectification
Features
Small U-type package for surface mounting
Single type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
Non-repetitive peak reverse V
surge voltage
1
Average forward current
*
Non-repetitive peak forward I
2
surge current
*
Junction temperature T
Storage temperature T
Note) *1:TC = 25°C
*2: Half sine-wave; 10 ms/cycle
V
I
F(AV)
RRM
RSM
FSM
40 to +150 °C
j
40 to +150 °C
stg
200 V
200 V
rr
2.5 A
40 A
1.8 ± 0.1
7.3 ± 0.1
0.93 ± 0.1
2.5 ± 0.1
123
6.5 ± 0.1
5.3 ± 0.1
4.35 ± 0.1
2.3 ± 0.1
4.6 ± 0.1
0.8 max.
0.75 ± 0.1
1.0 ± 0.1
2.3 ± 0.1
0.1 ± 0.05
0.5 ± 0.1
1 : N.C. 2 : Cathode 3 : Anode
U-Type Package
Unit : mm
0.5 ± 0.1
1.0 ± 0.2
Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Repetitive peak reverse current I
Forward voltage (DC) V
2
Reverse recovery time
Thermal resistance
*
1
*
Note) 1. Rated input/output frequency: 10 MHz
2. *1:TC = 25°C
*2:trr measuring circuit
50
D.U.T
5.5
50
RRM1
I
RRM2
R
F
t
rr
th(j-c)
V
= 200 V, TC = 25°C20µA
RRM
V
= 200 V, Tj = 150°C2mA
RRM
IF = 2.5 A, TC = 25°C 0.98 V
IF = 1 A, IR = 1 A 40 ns
Direct current (between junction and case)
t
rr
I
F
0.1 × I
I
R
R
12.5 °C/W
1
MA3U689
Fast Recovery Diodes (FRD)
IF V
10
Ta = 150°C
1
) A
(
1
10
F
2
10
3
10
F
Forward current I
4
10
5
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
IR T
100
10
) µA
(
R
1
0.1
Reverse current I
0.01
a
100°C 25°C
20°C
)
VR = 200 V
100 V 10 V
IR V
2
10
10
) µA
(
1
R
1
10
2
10
Ta = 150°C
Reverse current I
3
10
4
10
0 50 100 150 200 250 300
R
100°C
25°C
Reverse voltage VR (V
Ct V
120
100
) pF
(
t
80
60
40
Terminal capacitance C
20
R
)
f = 1 MHz
= 25°C
T
a
VF T
1.6
1.4
)
1.2
V (
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
40 0 40 80 120 160 200
a
IF = 2.5 A
Ambient temperature Ta (°C
1.0 A
500 mA
)
0.001
40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
0 50 100 150 200 250 300
)
Reverse voltage VR (V
)
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