Panasonic MA3U649 User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).
Fast Recovery Diodes (FRD)
MA3U649
Silicon planar type (cathode common)
For high-frequency rectification
Features
Low-loss type with fast reverse recovery time t
Cathode common dual type
rr
Package
Code U-G2
Pin Name
1: Anode 2: Cathode (Common)
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Repetitive peak reverse voltage V
Non-repetitive peak reverse V surge voltage
1
Forward current (Average)
Non-repetitive peak forward surge current
2
*
Junction temperature T
Storage temperature T
Note)*1: TC = 25°C
2: Half sine-wave; 10 ms/cycle
*
*
I
F(AV)
I
RRM
RSM
FSM
40 to +150 °C
j
40 to +150 °C
stg
200 V
200 V
5A
40 A
3: Anode
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Repetitive peak reverse current I
2
Reverse recovery time
Thermal resistance (j-c)
*
1
*
RRM1
I
RRM2
R
t
rr
th(j-c)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.*1: TC = 25°C
2: trr measurement circuit
*
IF = 2.5 A, TC = 25°C 0.98 V
F
V
= 200 V, TC = 25°C20µA
RRM
V
= 200 V, Tj = 150°C2mA
RRM
IF = 1 A, IR = 1 A 30 ns
12.5 °C/W
50
50
D.U.T
5.5
Publication date: February 2008 SKJ00014CED
t
rr
I
F
0.1 × I
I
R
R
1
MA3U649
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
10
Ta = 150°C
1
) A
(
1
10
F
I
2
10
3
10
Forward current
4
10
5
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
4
10
3
10
) A
(µ
R
2
10
a
20°C
100°C
25°C
)
VR = 200 V
100 V 10 V
1.6
)
1.2
V (
F
0.8
Forward voltage V
0.4
0
−40 20016012008040
Ambient temperature Ta (°C
30
) pF
(
t
20
VF T
Ct V
a
R
IF = 5 A
2.5 A
1 A
f = 1MFz
= 25°C
T
a
IR V
4
10
3
10
) A
2
(µ
10
R
10
1
Ta = 150°C
R
100°C
25°C
Reverse current I
1
10
2
10
0 50 100 150 200 250 300
)
Reverse voltage VR (V
)
10
Reverse current I
1
1
10
40 0 40 80 120 160 200
Ambient temperature Ta (°C
10
Terminal capacitance C
0
0 50 100 150 200 250 300
)
Reverse voltage VR (V
)
2
SKJ00014CED
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