Panasonic MA3SE020G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Schottky Barrier Diodes (SBD)

MA3SE020G

Silicon epitaxial planar type

For cellular phone

■ Features

•

High-frequency wave detection is possible

•

Low forward voltage V

•

Small terminal capacitance C

F

t

■ Package

•

Code
SSMini3-F3

•

Pin Name

1: Anode 1
2: Cathode 2

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage V

Forward current Single I

Series  25

Peak forward Single I

current Series  70

Junction temperature T

Storage temperature T

R

RM

F

FM

j

stg

20 V

20 V

35 mA

100 mA

125 °C

−55 to +125 °C

3: Cathode 1

Anode 2

■ Marking Symbol: M6B

■ Internal Connection

3

12

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

Terminal capacitance C

Forward dynamic resistance r

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

  3. Absolute frequency of input and output is 2 GHz

F1

V

F2

R

f

IF = 1 mA 0.40 V

IF = 35 mA 1.0

VR = 15 V 200 nA

VR = 0 V, f = 1 MHz 1.2 pF

t

IF = 5 mA 9 Ω

Publication date: October 2007 SKH00213AED

1

MA3SE020G

0

I

2

10

10

)

A

(µ

R

1

R

This product complies with the RoHS Directive (EU 2002/95/EC).

 V

Ta = 125°C

R

75°C

1.2

)
pF

(

t

0.8

Ct  V

R

= 25°C

T

a

)
A

(m

F(AV)

I

 T

T

= 125

j

F(AV)

°C

50

40

30

a

I

F

t

p

T

−1

10

Reverse current I

−2

10

−3

10

0 5 10 15 20 25 3

25°C

Reverse voltage VR (V

0.4

Terminal capacitance C

20

10

Forward current (Average) I

0

01020

)

Reverse voltage VR (V

)

0

0DC40 16012080

Ambient temperature Ta (°C

)

2

SKH00213AED