Panasonic MA3SE02 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3SE02
Silicon epitaxial planar type
For cellular phone
■ Features
•
High-frequency wave detection is possible
•
Low forward voltage V
•
Small terminal capacitance C
F
t
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current Single I
R
RM
F
Series 25
Peak forward Single I
FM
current Series 70
Junction temperature T
Storage temperature T
j
stg
20 V
20 V
35 mA
100 mA
125 °C
−55 to +125 °C
0.28
±0.05
±0.05
0.80
3
±0.05
1.60
(0.80)
+0.05
–0.03
(0.80)
0.28
0 to 0.1
±0.05
12
(0.51) (0.51)
(0.80)
1.60
3˚
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
EIAJ: SC-81 SSMini3-F2 Package
Unit: mm
0.12
(0.44)(0.44)
3˚
0.60
Marking Symbol: M6B
Internal Connection
3
+0.05
–0.02
+0.05
–0.03
0.88
(0.375)
+0.05
–0.03
(0.15)
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Forward dynamic resistance r
f
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
Publication date: February 2005 SKH00067CED
IF = 1 mA 0.40 V
IF = 35 mA 1.0
VR = 15 V 200 nA
VR = 0 V, f = 1 MHz 1.2 pF
t
IF = 5 mA 9 Ω
1
MA3SE02
This product complies with the RoHS Directive (EU 2002/95/EC).
IR V
3
10
2
10
)
A
10
(µ
R
1
−1
10
Reverse current I
−2
10
−3
10
01020
R
Ta = 125°C
75°C
25°C
Reverse voltage VR (V
Ct V
1.2
)
pF
(
t
0.8
0.4
R
= 25°C
T
a
Terminal capacitance C
0
)
01020
Reverse voltage VR (V
)
2
SKH00067CED
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