Panasonic MA3SD29FG User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
Rs = 50 Ω

Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω

tp = 2 µs
tr = 0.35 ns
δ = 0.05

IF = IR = 100 mA
RL = 100 Ω

10%

Input Pulse Output Pulse

I

rr

= 10 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

1

3

2

Schottky Barrier Diodes (SBD)

MA3SD29FG

Silicon epitaxial planar type

For super high speed switching circuits

 Features

 Low forward voltage VF : < 0.42 V (at IF = 100 mA)
 Optimum for high-frequency rectification
 Short reverse recovery time t

rr

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

Single

Forward current (Average)

Series 75

Single

Peak forward current

Series 150

Non-repetitive peak forward surge current *I

Junction temperature T

Storage temperature T

Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

I

F(AV)

I

FSM

R

RRM

FM

j

stg

–55 to +125

30 V

30 V

100

200

1 A

125

 Package

Code

SSMini3-F3
Pin Name

1: Anode 1

2: Cathode 2

3: Cathode 1

Anode 2

Internal Connection

mA

mA

 Marking Symbol: M5R

°C

°C

 Electrical Characteristics Ta = 25°C±3°C

Forward voltage

Reverse current

Terminal capacitance C

Reverse recovery time

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 250 MHz

3. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage

4. *: trr measurement circuit

Publication date: October 2007 SKH00211AED 1

Parameter Symbol Conditions Min Typ Max Unit

*

of current from the operating equipment.

V

V

I

R1

I

R2

t

rr

IF = 10 mA 0.25 0.29

F1

IF = 100 mA 0.39 0.42

F2

VR = 10 V 25

VR = 30 V 120

VR = 0 V, f = 1 MHz 11 pF

t

IF = IR = 100 mA, Irr = 10 mA,

RL = 100 W

1 ns

V

mA

This product complies with the RoHS Directive (EU 2002/95/EC).

0 0.2 0.4 0.6

10

3

10

2

10

1

10

−1

10

−2

10

−3

MA3SD29F_ IF-V

F

Forward current I

F

(mA)

Forward voltage VF (V)

Ta = 125°C

75°C

25°C

−25°C

0

10

20

30

10

5

10

4

10

3

10

2

10

1

MA3SD29F_ IR-V

R

Reverse current I

R

(µA)

Reverse voltage VR (V)

Ta = 125°C

75°C

25°C

0

10

20

30

35

30

25

20

10

15

5

0

MA3SD29F_ Ct-V

R

Terminal capacitance C

t

(pF)

Reverse voltage VR (V)

0

20

40

60

120

100

80

140

0DC40

160120

80

Tj = 125

°C

Ambient temperature Ta

(°C)

Forward current (Average) I

F(AV)

(m

A

)

t

p

T

I

F

MA3SD29FG

IF  VF IR  VR Ct  V

I

F(AV)

 T

a

R

2 SKH00211AED