Panasonic MA3S795EG User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
Rs = 50 Ω

Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω

tp = 2 µs
tr = 0.35 ns
δ = 0.05

IF = 10 mA
IR = 10 mA
RL = 100 Ω

10%

Input Pulse Output Pulse

Irr = 1 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

1 2

3

Schottky Barrier Diodes (SBD)

MA3S795EG

Silicon epitaxial planar type

For switching
For wave detection

 Package

 Features

 High-density mounting is possible
 Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V
 Optimum for high frequency rectification because of its short

reverse recovery time t

rr

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage V

Single

Forward current

Double 20

Single

Peak forward current

Double 110

Junction temperature T

Storage time T

R

RM

I

F

I

FM

j

stg

30 V

30 V

30

mA

150

mA

125

–55 to +125

°C

°C

Code

SSMini3-F3
Pin Name

1: Anode 1

2: Anode 2

3: Cathode

 Marking Symbol: M3D

 Internal Connection

 Electrical Characteristics Ta = 25°C±3°C

Forward voltage V

Reverse current I

Terminal capacitance C

Reverse recovery time

Detection efficiency

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage

3. Absolute frequency of input and output is 2 GHz

4. *: trr measurement circuit

Publication date: October 2008 SKH00236AED 1

Parameter Symbol Conditions Min Typ Max Unit

= 1 mA 0.3 V

F1IF

*

of current from the operating equipment.

V

t

rr

η

= 30 mA 1.0

F2IF

VR = 30 V 30

R

VR = 1 V, f = 1 MHz 1.5 pF

t

IF = IR = 10 mA, Irr = 1 mA,

RL = 100 W

VIN = 3 V

, f = 30 MHz

(peak)

RL = 3.9 kW, CL = 10 pF

1.0 ns

65 %

mA

This product complies with the RoHS Directive (EU 2002/95/EC).

10

–2

0 0.4 0.8 1.2 1.6 2.0 2.4

10

–1

1

10

10

2

10

3

Forward voltage VF (V

)

Forward current I

F

(

mA

)

Ta = 125°C

−20°C

75°C 25°C

10

−1

0 5 10 15 20 25 30

1

10

10

2

10

3

10

4

Reverse voltage VR (V

)

Reverse current I

R

(

µA

)

Ta = 125°C

75°C

25°C

0

0.2

0.4

0.6

0.8

1.0

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

)

Forward voltage V

F

(

V

)

IF = 30 mA

10 mA

1 mA

10

−1

−40 0 40 80 120 160 200

1

10

10

2

10

3

10

4

Ambient temperature Ta (°C

)

Reverse current I

R

(

µA

)

VR = 25 V

3 V
1 V

0

3.0

2.5

2.0

1.5

1.0

0.5

0 5 10 15 20 25 30

Reverse voltage VR (V

)

Terminal capacitance C

t

(

pF

)

f = 1 MHz
Ta = 25°C

MA3S795EG

IF  VF IR  VR VF  T

IR  Ta Ct  V

R

a

2 SKH00236AED