Panasonic MA3S795E Datasheet
Schottky Barrier Diodes (SBD)
1.60 ± 0.1
1.60
+ 0.05
− 0.03
0.60
+ 0.05
− 0.03
0.12
+ 0.05
− 0.02
0.80
1
2
0.440.44
3
0.80 ± 0.05
0.80
0.28 ± 0.05
0.80
0.51
0.51
0.28 ± 0.05
0.28 ± 0.05
0.88
+ 0.05
− 0.03
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
MA3S795E
Silicon epitaxial planar type
For switching circuits
■ Features
•
Extra-small (SS-mini type) package, allowing high-density mounting
•
Optimum for low voltage rectification because of its low V
0.3 V or less at I
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
= 1 mA)
F
)
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
For switching circuits V
Peak forward
current
Forward current
(DC)
Single I
Double* 110
Single I
Double* 20
Junction temperature T
Storage temperature T
Note) * : Value per chip
R
RM
FM
F
j
stg
30 V
30 V
150 mA
30 mA
125 °C
−55 to +125 °C
F
Unit : mm
(VF =
1 : Anode 1
2 : Anode 2
3 : Carhode 1
Cathode 2
SS-Mini Type Package (3-pin)
Marking Symbol: M3D
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring circuit
VR = 30 V 30 µA
IF = 1 mA 0.3 V
IF = 30 mA 1 V
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
1
MA3S795E
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
Ta = 125°C
mA
(
F
10
1
Forward current I
–1
10
−2
10
0 0.4 0.8 1.2 1.6 2.0 2.4
F
75°C 25°C
− 20°C
Forward voltage VF (V
Ct V
3.0
2.5
)
pF
(
t
2.0
1.5
1.0
Terminal capacitance C
0.5
R
)
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
a
10 mA
1 mA
Ambient temperature Ta (°C
IR T
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
a
VR = 25 V
3 V
1 V
IF = 30 mA
IR V
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
)
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
0
0 5 10 15 20 25 30
Reverse voltage VR (V
2
−1
10
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
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