Panasonic MA3S781E, MA3S781D User Manual

Schottky Barrier Diodes (SBD)

This product complies with the RoHS Directive (EU 2002/95/EC).

MA3S781D (MA781WA), MA3S781E (MA781WK)

Silicon epitaxial planar type

For high speed switching

■ Features

•

Two MA3S781 (MA781) is contained in one package

•

High-density mounting is possible

•

Low forward voltage V

F

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage

Forward current

Single I

V

Double 20

Peak forward current

Single I

Double 110

Junction temperature T

Storage temperature T

R

RM

F

FM

j

stg

30 V

30 V

30 mA

150 mA

125 °C

−55 to +125 °C

0.28±0.05

3

12

(0.51) (0.51)

(0.80)

1.60

3˚

(0.80)

+0.05
–0.03

0.28

0 to 0.1

0.80±0.05

(0.80)

±0.05

±0.05

1.60

Unit: mm

+0.05

0.12

–0.02

(0.44)(0.44)

+0.05

–0.03

0.60

0.88

(0.375)

+0.05
–0.03

(0.15)

3˚

MA3S781D MA3S781E

EIAJ: SC-81
SSMini3-F2 Package

1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode Cathode

Marking Symbol

• MA3S781D: M2P • MA3S781E: M2R

Internal Connection

3

3

■ Electrical Characteristics Ta = 25°C ± 3°C

12

D

12

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

Terminal capacitance C

Reverse recovery time

*

F1

V

F2

R

t

rr

IF = 1 mA 0.4 V

IF = 30 mA 1.0

VR = 30 V 1 µA

VR = 1 V, f = 1 MHz 1.5 pF

t

IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω

Detection efficiency η VIN = 3 V

, f = 30 MHz 65 %

(peak)

RL = 3.9 kΩ, CL = 10 pF

Note) 1.

Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.

  3. Absolute frequency of input and output is 2 GHz. 4.

Bias Application Unit (N-50BU)

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

Publication date: April 2004 SKH00061BED

Wave Form Analyzer
(SAS-8130)
R

= 50 Ω

i

: t

measurement circuit

*

rr

Input Pulse Output Pulse

t

t

p

r

10%

V

R

t
t
δ = 0.05

90%

= 2 µs

p

= 0.35 ns

r

t

I

F

I

= 10 mA

F

= 10 mA

I

R

= 100 Ω

R

L

t

rr

I

= 1 mA

rr

t

Note) The part numbers in the parenthesis show conventional part number.

E

1

MA3S781D, MA3S781E

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

3

10

2

10

)

mA

(

F

10

1

Forward current I

−1

10

−2

10

Ta = 125°C

0 0.4 0.8 1.2

F

75°C 25°C

Forward voltage VF (V

IR  T

3

10

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

a

VR = 30 V

10 V
1 V

−20°C

)

IR  V

3

10

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

−2

10

0 5 10 15 20 25 30

R

Reverse voltage VR (V

Ct  V

3.0

)
pF

(

t

2.0

1.0

R

Terminal capacitance C

Ta = 125°C

75°C

25°C

)

VF  T

1.6

)

1.2

V
(

F

0.8

Forward voltage V

0.4

0

−40 0 40 80 120 160 200

a

IF = 30 mA

3 mA

1 mA

Ambient temperature Ta (°C

I

 t

)
A

(

F(surge)

3

10

2

10

10

1

F(surge)

W

Ta = 25°C

t

Forward surge current I

)

I

F(surge)

W

−2

10

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

2

0

)

0102030

Reverse voltage VR (V

)

−1

10

−1

10

110

Pulse width tW (ms

)

SKH00061BED