Panasonic MA3S7810G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3S7810G
Silicon epitaxial planar type
For high speed switching
For wave detection
■ Features
•
High-density mounting is possible
•
Optimum for high frequency rectification because of its short
reverse recovery time t
•
Low forward voltage V
rr
and good rectification efficiency
F
■ Package
•
Code
SSMini3-F3
•
Pin Name
1: Anode
2: N.C.
3: Cathode
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current I
Peak forward current I
Junction temperature T
Storage temperature T
R
RM
F
FM
j
stg
30 V
30 V
30 mA
150 mA
125 °C
−55 to +125 °C
■ Marking Symbol: M1L
■ Internal Connection
3
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η VIN = 3 V
Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 1 mA 0.4 V
IF = 30 mA 1.0
VR = 30 V 300 nA
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
t
r
δ = 0.05
= 2 µs
= 0.35 ns
t
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
t
rr
= 1 mA
I
rr
t
Publication date: October 2007 SKH00202AED
1
MA3S7810G
3
10
I
This product complies with the RoHS Directive (EU 2002/95/EC).
V
F
F
3
10
IR V
R
VF T
1.6
a
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
Ta = 125°C
0 0.4 0.8 1.2
75°C 25°C
Forward voltage VF (V
IR T
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
a
VR = 30 V
10 V
1 V
−20°C
)
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
3.0
)
pF
(
t
2.0
1.0
R
Terminal capacitance C
Ta = 125°C
75°C
25°C
)
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
IF = 30 mA
3 mA
1 mA
Ambient temperature Ta (°C
I
t
)
A
(
F(surge)
3
10
2
10
10
1
F(surge)
W
Ta = 25°C
t
Forward surge current I
)
I
F(surge)
W
−2
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
I
T
T
= 125
j
°C
F(AV)
I
F
)
A
(m
F(AV)
50
40
30
20
10
Forward current (Average) I
0
0DC40 16012080
Ambient temperature Ta (°C
2
0
0102030
)
Reverse voltage VR (V
)
−1
10
−1
10
110
Pulse width tW (ms
)
a
t
p
T
)
SKH00202AED
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