Panasonic MA3S781 Datasheet
Schottky Barrier Diodes (SBD)
MA3S781
Silicon epitaxial planar type
For the switching circuit
Unit : mm
1.60 ± 0.1
0.80
0.80 ± 0.05
0.28 ± 0.05
■ Features
•
1608 type diode contained in the (SS-mini) package
•
Surface mounting, allowing high-density mounting
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
•
Low V
(forward rise voltage), with high rectification efficiency
F
)
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current (DC) I
Peak forward current I
Junction temperature T
Storage temperature T
R
RM
F
FM
j
stg
30 V
30 V
30 mA
150 mA
125 °C
−55 to +125 °C
+ 0.05
+ 0.05
Marking Symbol: M1L
Internal Connection
− 0.03
1.60
− 0.03
0.60
1
0.80
0.51
0.51
0.80
2
0.28 ± 0.05
0.440.44
+ 0.05
0.88
− 0.03
3
0.28 ± 0.05
+ 0.05
− 0.02
0.12
1 : Cathode
2 : NC
3 : Anode
SS-Mini Type Package (3-pin)
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
Detection efficiency
*
t
rr
η Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
VR = 30 V 300 nA
IF = 1 mA 0.4 V
IF = 30 mA 1 V
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Input Pulse Output Pulse
t
t
p
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
V
R
t
t
δ = 0.05
90%
= 2 µs
p
= 0.35 ns
r
t
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
t
rr
I
= 1 mA
rr
t
1
MA3S781
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
Ta = 125°C
0 0.2 0.4 0.6 0.8 1.0 1.2
F
75°C 25°C
Forward voltage VF (V
IR T
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
−40 0 40 80 120 160 200
a
VR = 30 V
10 V
1 V
Ambient temperature Ta (°C
− 20°C
)
VF T
Ct V
a
IF = 30 mA
3 mA
1 mA
)
R
)
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
3.0
2.5
)
pF
(
t
2.0
1.5
1.0
Terminal capacitance C
0.5
0
0 5 10 15 20 25 30
)
Reverse voltage VR (V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03 30
IR V
R
Reverse voltage VR (V
I
t
F(surge)
0.1 1 1030.3
W
Ta = 25°C
t
Pulse width tW (ms
Ta = 125°C
75°C
25°C
)
I
F(surge)
W
)
2
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