Panasonic MA3S1370G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3S1370G
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• Two isolated elements contained in one package, allowing highdensity mounting
• Two diodes are connected in series in the package
■ Package
•
Code
SSMini3-F3
•
Pin Name
1: Anode 1
■ Absolute Maximum Ratings Ta = 25°C
2: Cathode 2
3: Cathode 1
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
Forward current Single I
Series 65
Peak forward
current
Non-repetitive peak
forward surge current
Single I
Series 145
Single I
*
Series 325
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
V
RM
F
FM
FSM
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
Anode 2
■ Marking Symbol: MS
■ Internal Connection
3
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 2 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
Publication date: October 2007 SKF00087AED
1
MA3S1370G
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
= 150°C
T
)
a
mA
(
Forward current I
100°C
F
10
10
25°C
10
−20°C
1
−1
−2
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
V
= 75 V
R
a
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
6 V
)
35 V
IR V
R
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
1
0 20 40 60 80 100 120
Reverse voltage VR (V
Ct V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
R
= 150°C
T
a
100°C
25°C
f = 1 MHz
= 25°C
T
a
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
I
F(surge)
)
A
(
F(surge)
3
10
2
10
10
1
a
I
F
t
Non repetitive
= 100 mA
10 mA
3 mA
W
= 25°C
T
a
I
F(surge)
t
W
)
Forward surge current I
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
)
0 20406080100120
Reverse voltage VR (V
)
−1
10
−1
Pulse width tW (ms
10110
)
SKF00087AED
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