Panasonic MA3S137 Datasheet

Switching Diodes

MA3S137

Silicon epitaxial planar type

For high-speed switching circuits

■ Features

•

Super-small SS-mini type package contained two elements, allow­ing high-density mounting

•

Two diodes are connected in series in the package

1.60 ± 0.1

0.80

0.80 ± 0.05

0.28 ± 0.05

1

0.80

0.51

+ 0.05

− 0.03

1.60

0.51

0.80

2

Unit : mm

0.28 ± 0.05

3

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Forward current

(DC)

Peak forward

current

Non-repetitive peak

forward surge current

Single I

Series 65

Single I

Series 145

Single I

*

Series 325

Junction temperature T

Storage temperature T

R

RM

F

FM

FSM

j

−55 to +150 °C

stg

100

225

500

150 °C

Note) * : t = 1 s

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Reverse voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

Bias Application Unit N-50BU

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

R

F

R

t

t

rr

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

0.28 ± 0.05

+ 0.05

80 V

80 V

mA

+ 0.05

− 0.03

0.60

0.88

0.440.44

+ 0.05

− 0.03

− 0.02

0.12

1 : Anode 1
2 : Cathode 2
3 : Cathode 1

mA

mA

SS-Mini Type Package (3-pin)

Marking Symbol: MS

Anode 2

Internal Connection

1

3

2

VR = 75 V 100 nA

IF = 100 mA 1.2 V

IR = 100 µA80V

VR = 0 V, f = 1 MHz 2 pF

IF = 10 mA, VR = 6 V 3 ns

Irr = 0.1 · IR, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

t

= 10 mA

I

F

= 6 V

V

R

= 100 Ω

R

L

rr

Irr = 0.1 · I

t

R

I

F

1

MA3S137

Switching Diodes

IF  V

3

10

2

10

)

Ta = 150°C

mA
(

Forward current I

100°C

F

10

10

25°C

10

− 20°C

1

−1

−2

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

 T

5

10

4

10

)
nA

(

R

3

10

2

10

Reverse current I

10

1

−40 0 40 80 120 160 200

a

VR = 75 V

Ambient temperature Ta (°C

6 V

)

35 V

IR  V

Ct  V

R

Ta = 150°C

100°C

25°C

R IR

f = 1 MHz
T

= 25°C

a

1.6

1.4

)

1.2

V
(

F

1.0

0.8

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160 200

)

1 000

300

)
A

(

100

F(surge)

30

10

3

1

Forward surge current I

0.3

0.1

)

5

10

4

10

)
nA

(

R

3

10

2

10

Reverse current I

10

1

0 20406080100120

Reverse voltage VR (V

1.2

1.0

)
pF

(

t

0.8

0.6

0.4

Terminal capacitance C

0.2

0

)

0 20406080100120

Reverse voltage VR (V

VF  T

a

IF = 100 mA

10 mA

3 mA

Ambient temperature Ta (°C

I

 t

F(surge)

0.3 3 301010.1

Pulse width tW (ms

W

Ta = 25°C

I

F(surge)

t

W

Non repetitive

)

)

2