Panasonic MA3S133 Datasheet
Switching Diodes
1.60 ± 0.1
1.60
+ 0.05
− 0.03
0.60
+ 0.05
− 0.03
0.12
+ 0.05
− 0.02
0.80
1
2
0.440.44
3
0.80 ± 0.05
0.80
0.28 ± 0.05
0.80
0.51
0.51
0.28 ± 0.05
0.28 ± 0.05
0.88
+ 0.05
− 0.03
MA3S133
Silicon epitaxial planar type
For switching circuits
■ Features
•
Super-small SS-mini type package contained two elements, allowing high-density mounting
•
Two diodes are connected in series in the package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current
(DC)
Peak forward
current
Single I
Series 65
Single I
Series 130
Junction temperature T
Storage temperature T
R
RM
F
FM
j
stg
80 V
80 V
100
200
mA
mA
150 °C
−55 to +150 °C
Unit : mm
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
SS-Mini Type Package (3-pin)
Marking Symbol: MP
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Reverse voltage (DC) V
A
*
t
*
C
t
*
t
rr
*
t
rr
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Terminal capacitance C
3
Reverse recovery time
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Between pins 2 and 3 *2 : Between pins 1 and 3 *3 : trr measuring circuit
*
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
VR = 75 V 100 nA
IF = 100 mA 1.2 V
F
IR = 100 µA80V
R
1
VR = 0 V, f = 1 MHz 5.5 pF
2
VR = 0 V, f = 1 MHz 3.0 pF
1
IF = 10 mA, VR = 6 V 150 ns
Irr = 0.1 · IR, RL = 100 Ω
2
IF = 10 mA, VR = 6 V 9 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
t
r
δ = 0.05
= 2 µs
= 0.35 ns
t
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
MA3S133
Switching Diodes
IF V
1 000
100
)
mA
(
F
10
1
Forward current I
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Between pins 1 and 3
Ta = 150°C
Forward voltage VF (V
T
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
a
Between pins 1 and 3
IF = 100 mA
Ambient temperature Ta (°C
100°C
25°C
− 20°C
)
10 mA
3 mA
IF V
10 000
1 000
)
mA
(
F
Ta = 150°C
100
100°C
25°C
10
− 20°C
Forward current I
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
F
Between pins 2 and 3
VF T
a VF
Between pins 2 and 3
)
IF = 100 mA
10 mA
3 mA
1 000
100
)
nA
(
R
10
1
Reverse current I
0.1
0.01
0 20406080100120
1 000
100
)
nA
(
R
10
1
VR = 75 V
Reverse current I
0.1
0.01
−40 0 40 80 120 160 200
)
IR V
R
Between pins 2 and 3
Between pins 1 and 3
Ta = 150°C
100°C
Ta = 150°C
100°C
25°C
25°C
Reverse voltage VR (V
IR T
a
Between pins 2 and 3
Between pins 1 and 3
VR = 75 V
35 V
6 V
35 V
6 V
Ambient temperature Ta (°C
)
)
V
6.0
5.0
)
pF
(
t
4.0
3.0
2.0
Terminal capacitance C
1.0
Between pins 1 and 3
0
0 20406080100120
R
Between pins 2 and 3
Reverse voltage VR (V
2
f = 1 MHz
= 25°C
T
a
)
I
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03
F(surge)
Between pins 2 and 3
Between pins 1 and 3
0.3 3 301010.1
Pulse width tW (ms
t
Non repetitive
W Ct
Ta = 25°C
I
F(surge)
t
W
)
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