Page 1
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3S132AG, MA3S132KG
Silicon epitaxial planar type
For switching circuits
■ Features
• Short reverse recovery time t
• Small terminal capacitance C
• Allowing high-density mounting
rr
t
■ Package
•
Code
SSMini3-F3
•
Pin Name
MA3S132AG MA3S132KG
1: Cathode 1: Anode
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
RM
F
FM
FSM
j
−55 to +150 °C
stg
100 mA
225 mA
500 mA
150 °C
80 V
80 V
2: N.C. 2: N.C.
3: Anode 3: Cathode
■ Marking Symbol
MA3S132AG: MB
MA3S132KG: MI
■ Internal Connection
3
12
A
3
12
K
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 2 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
Publication date: October 2007 SKF00082AED
1
Page 2
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132AG, MA3S132KG
Characteristics charts of MA3S132AG
I
V
F
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
F
= 150°C
T
a
100°C
25°C
−20°C
)
IR V
R
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
1
0 20 40 60 80 100 120
Reverse voltage VR (V
T
a
100°C
25°C
= 150°C
)
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
a
I
F
= 100 mA
Ambient temperature Ta (°C
10 mA
3 mA
)
IR T
V
= 75 V
R
a
6 V
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
35 V
Ct V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
0
0 20406080100120
)
Reverse voltage VR (V
f = 1 MHz
= 25°C
T
a
)
R
3
10
)
A
(
2
10
F(surge)
10
1
Forward surge current I
−1
10
I
t
F(surge)
−1
Pulse width tW (ms
W
= 25°C
T
a
I
F(surge)
t
W
Non repetitive
10110
)
3
SKF00082AED
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC).
Characteristics charts of MA3S132KG
I
V
F
3
10
2
10
= 150°C
T
)
a
mA
(
Forward current I
100°C
F
10
25°C
10
−20°C
1
−1
F
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
IR V
MA3S132AG, MA3S132KG
R
1.6
= 150°C
T
a
)
1.2
V
(
100°C
25°C
F
0.8
Forward voltage V
0.4
VF T
a
= 100 mA
I
F
10 mA
3 mA
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
IR T
V
= 75 V
R
a
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
35 V
6 V
1
0 20 40 60 80 100 120
)
Reverse voltage VR (V
Ct V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
0
)
0 20 40 60 80 100 120
Reverse voltage VR (V
R
)
f = 1 MHz
T
= 25
a
)
°C
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
I
t
10
)
A
(
10
F(surge)
3
2
10
1
F(surge)
W
T
a
t
W
Non repetitive
Forward surge current I
−1
10
−1
Pulse width tW (ms
= 25°C
I
F(surge)
10110
)
)
SKF00082AED
3
Page 4
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132AG, MA3S132KG
SSMini3-F3
1.60
0.26
3
12
(0.50) (0.50)
1.00
+0.05
−0.03
+0.05
−0.02
±0.05
−0.03
+0.05
0.85
±0.05
1.60
Unit: mm
±0.05
0.375
(5°)
+0.05
0.13
−0.02
(5°)
−0.03
+0.05
(0.45)
0.70
0 to 0.10
4
SKF00082AED
Page 5
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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