Panasonic MA3S132KG, MA3S132AG User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3S132AG, MA3S132KG
Silicon epitaxial planar type
For switching circuits
■ Features
• Short reverse recovery time t
• Small terminal capacitance C
• Allowing high-density mounting
rr
t
■ Package
•
Code
SSMini3-F3
•
Pin Name
MA3S132AG MA3S132KG
1: Cathode 1: Anode
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
RM
F
FM
FSM
j
−55 to +150 °C
stg
100 mA
225 mA
500 mA
150 °C
80 V
80 V
2: N.C. 2: N.C.
3: Anode 3: Cathode
■ Marking Symbol
MA3S132AG: MB
MA3S132KG: MI
■ Internal Connection
3
12
A
3
12
K
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 2 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
Publication date: October 2007 SKF00082AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132AG, MA3S132KG
Characteristics charts of MA3S132AG
I
V
F
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
F
= 150°C
T
a
100°C
25°C
−20°C
)
IR V
R
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
1
0 20 40 60 80 100 120
Reverse voltage VR (V
T
a
100°C
25°C
= 150°C
)
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
a
I
F
= 100 mA
Ambient temperature Ta (°C
10 mA
3 mA
)
IR T
V
= 75 V
R
a
6 V
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
35 V
Ct V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
0
0 20406080100120
)
Reverse voltage VR (V
f = 1 MHz
= 25°C
T
a
)
R
3
10
)
A
(
2
10
F(surge)
10
1
Forward surge current I
−1
10
I
t
F(surge)
−1
Pulse width tW (ms
W
= 25°C
T
a
I
F(surge)
t
W
Non repetitive
10110
)
3
SKF00082AED
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