Panasonic MA3S132DG, MA3S132EG User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3S132DG, MA3S132EG
Silicon epitaxial planar type
For switching circuits
■ Features
• Short reverse recovery time t
• Small terminal capacitance C
• Two isolated elements contained in one package, allowing high-
density mounting
rr
t
■ Package
•
Code
SSMini3-F3
•
Pin Name
MA3S132DG MA3S132EG
1: Cathode 1 1: Anode 1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
Forward current
Single I
Double 150
Peak forward
current
Non-repetitive peak
forward surge current
Single I
Double 340
Single I
*
Double 750
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
V
RM
F
FM
FSM
j
stg
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
80 V
80 V
2: Cathode 2 2: Anode 2
3: Anode 3: Cathode
■ Marking Symbol
MA3S132DG: MO
MA3S132EG: MU
■ Internal Connection
3
12
D
1
3
2
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
Terminal capacitance
MA3S132DG
F
R
R
C
MA3S132EG
Reverse recovery time *MA3S132DG
t
rr
MA3S132EG
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 15 pF
t
2
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 Ω 3
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
Publication date: October 2007 SKF00083AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132DG, MA3S132EG
Characteristics charts of MA3S132DG
I
V
F
3
10
F
IR V
4
10
R
T
a
= 150°C
1.6
VF T
a
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
IR T
a
)
nA
(
4
10
3
10
R
2
10
10
Reverse current I
1
T
a
V
R
= 150°C
100°C
25°C
−20°C
)
= 75 V
35 V
6 V
3
10
)
nA
(
R
2
10
10
Reverse current I
1
−1
10
0 20 40 60 80 100 120
Reverse voltage VR (V
Ct V
8
)
pF
6
(
t
4
2
Terminal capacitance C
R
100°C
25°C
)
f = 1 MHz
= 25°C
T
a
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
I
F
Ambient temperature Ta (°C
I
t
)
A
(
F(surge)
3
10
2
10
10
1
F(surge)
W
T
a
t
W
Non repetitive
Forward surge current I
= 100 mA
10 mA
3 mA
)
= 25°C
I
F(surge)
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
3
0
0 20 40 60 80 100 120
)
Reverse voltage VR (V
)
−1
10
−1
Pulse width tW (ms
10110
)
SKF00083AED
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