Panasonic MA3S132E, MA3S132D User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132D (MA132WA), MA3S132E (MA132WK)
Silicon epitaxial planar type
For switching circuits
■ Features
• Short reverse recovery time t
• Small terminal capacitance C
• Two isolated elements contained in one package, allowing high-
density mounting
rr
t
0.28±0.05
3
12
1.60
(0.80)
+0.05
–0.03
0.28
(0.51) (0.51)
(0.80)
3˚
0.80±0.05
(0.80)
±0.05
±0.05
1.60
Unit: mm
+0.05
0.12
–0.02
(0.44)(0.44)
+0.05
3˚
+0.05
0.60
–0.03
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
Forward current
Single I
Double 150
Peak forward
current
Non-repetitive peak
forward surge current
Single I
Double 340
Single I
*
Double 750
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
V
RM
F
FM
FSM
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
EIAJ: SC-81
SSMini3-F2 Package
Marking Symbol:
• MA3S132D: MO • MA3S132E: MU
Internal Connection
12
0 to 0.1
MA3S132D MA3S132E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode Cathode
3
D
1
(0.15)
3
2
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
Terminal capacitance
MA3S132D
F
R
R
C
MA3S132E
Reverse recovery time *MA3S132D
t
rr
MA3S132E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 15 pF
t
2
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 Ω 3
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
Note) The part numbers in the parenthesis show conventional part number.
–0.03
0.88
(0.375)
Publication date: March 2004 SKF00024BED
1
MA3S132D, MA3S132E
This product complies with the RoHS Directive (EU 2002/95/EC).
Characteristics charts of MA3S132D
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
a
)
nA
(
4
10
3
10
R
2
10
10
T
a
V
R
= 150°C
100°C
25°C
−20°C
)
= 75 V
35 V
6 V
IR V
R
)
nA
(
4
10
3
10
R
2
10
10
Reverse current I
1
−1
10
0 20 40 60 80 100 120
Reverse voltage VR (V
Ct V
8
)
pF
6
(
t
4
R
= 150°C
T
a
100°C
25°C
)
f = 1 MHz
= 25°C
T
a
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
a
I
F
Ambient temperature Ta (°C
I
t
)
A
(
F(surge)
3
10
2
10
10
F(surge)
W
T
a
t
W
Non repetitive
= 100 mA
10 mA
3 mA
)
= 25°C
I
F(surge)
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
Terminal capacitance C
0
0 20 40 60 80 100 120
)
Reverse voltage VR (V
)
1
Forward surge current I
−1
10
−1
Pulse width tW (ms
10110
)
2
SKF00024BED
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