Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132D (MA132WA), MA3S132E (MA132WK)
Silicon epitaxial planar type
For switching circuits
■ Features
• Short reverse recovery time t
• Small terminal capacitance C
• Two isolated elements contained in one package, allowing high-
density mounting
rr
t
0.28±0.05
3
12
1.60
(0.80)
+0.05
–0.03
0.28
(0.51) (0.51)
(0.80)
3˚
0.80±0.05
(0.80)
±0.05
±0.05
1.60
Unit: mm
+0.05
0.12
–0.02
(0.44)(0.44)
+0.05
3˚
+0.05
0.60
–0.03
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
Forward current
Single I
Double 150
Peak forward
current
Non-repetitive peak
forward surge current
Single I
Double 340
Single I
*
Double 750
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
V
RM
F
FM
FSM
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
EIAJ: SC-81
SSMini3-F2 Package
Marking Symbol:
• MA3S132D: MO • MA3S132E: MU
Internal Connection
12
0 to 0.1
MA3S132D MA3S132E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode Cathode
3
D
1
(0.15)
3
2
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
Terminal capacitance
MA3S132D
F
R
R
C
MA3S132E
Reverse recovery time *MA3S132D
t
rr
MA3S132E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 15 pF
t
2
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 Ω 3
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
Note) The part numbers in the parenthesis show conventional part number.
–0.03
0.88
(0.375)
Publication date: March 2004 SKF00024BED
1
MA3S132D, MA3S132E
This product complies with the RoHS Directive (EU 2002/95/EC).
Characteristics charts of MA3S132D
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
a
)
nA
(
4
10
3
10
R
2
10
10
T
a
V
R
= 150°C
100°C
25°C
−20°C
)
= 75 V
35 V
6 V
IR V
R
)
nA
(
4
10
3
10
R
2
10
10
Reverse current I
1
−1
10
0 20 40 60 80 100 120
Reverse voltage VR (V
Ct V
8
)
pF
6
(
t
4
R
= 150°C
T
a
100°C
25°C
)
f = 1 MHz
= 25°C
T
a
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
a
I
F
Ambient temperature Ta (°C
I
t
)
A
(
F(surge)
3
10
2
10
10
F(surge)
W
T
a
t
W
Non repetitive
= 100 mA
10 mA
3 mA
)
= 25°C
I
F(surge)
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
Terminal capacitance C
0
0 20 40 60 80 100 120
)
Reverse voltage VR (V
)
1
Forward surge current I
−1
10
−1
Pulse width tW (ms
10110
)
2
SKF00024BED
Characteristics charts of MA3S132E
This product complies with the RoHS Directive (EU 2002/95/EC).
I
V
F
3
10
F
MA3S132D, MA3S132E
IR V
5
10
R
T
a
= 150°C
1.6
VF T
a
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
IR T
a
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
Ta = 150°C
100°C
25°C
−20°C
)
= 75 V
V
R
35 V
6 V
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
0 20 40 60 80 100 120
Reverse voltage VR (V
Ct V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
R
100°C
25°C
f = 1 MHz
= 25°C
T
a
)
1.2
V
(
F
= 100 mA
I
F
t
10 mA
3 mA
)
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
)
Ambient temperature Ta (°C
I
3
10
)
A
(
2
10
F(surge)
10
1
F(surge)
Forward surge current I
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
0
0 20406080100120
Reverse voltage VR (V
)
SKF00024BED
−1
10
−1
Pulse width tW (ms
10110
)
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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