Panasonic MA3S132K, MA3S132A User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S132A (MA132A), MA3S132K (MA132K)
Silicon epitaxial planar type
For switching circuits
■ Features
• Short reverse recovery time t
• Small terminal capacitance C
• Allowing high-density mounting
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current I
Peak forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note)*:t = 1 s
*
rr
t
R
RM
F
FM
FSM
j
stg
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
80 V
80 V
0.28±0.05
3
12
1.60
(0.80)
+0.05
–0.03
0.28
0 to 0.1
(0.51) (0.51)
(0.80)
3˚
0.80±0.05
(0.80)
±0.05
±0.05
1.60
Unit: mm
+0.05
0.12
–0.02
(0.44)(0.44)
+0.05
3˚
+0.05
0.60
–0.03
(0.15)
MA3S132A MA3S132K
EIAJ: SC-81
SSMini3-F2 Package
1 Cathode Anode
2 N.C. N.C.
3 Anode Cathode
Marking Symbol:
• MA3S132A: MB • MA3S132K: MI
Internal Connection
3
3
–0.03
0.88
(0.375)
12
A
12
K
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 2 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
I
= 10 mA
F
V
R
R
L
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
I
F
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004 SKF00023BED
1
MA3S132A, MA3S132K
This product complies with the RoHS Directive (EU 2002/95/EC).
Characteristics charts of MA3S132A
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
V
= 75 V
R
a
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
T
a
6 V
= 150°C
100°C
25°C
−20°C
)
35 V
IR V
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
0 20406080100120
R
T
a
100°C
25°C
Reverse voltage VR (V
Ct V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
R
f = 1 MHz
T
a
= 150°C
)
= 25°C
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
a
I
F
Ambient temperature Ta (°C
I
t
10
)
A
(
10
F(surge)
3
2
10
1
F(surge)
W
T
t
Non repetitive
Forward surge current I
= 100 mA
10 mA
3 mA
= 25°C
a
I
F(surge)
W
)
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
0 20406080100120
)
Reverse voltage VR (V
)
−1
10
−1
Pulse width tW (ms
10110
)
SKF00023BED
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