This product complies with the RoHS Directive (EU 2002/95/EC).
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Schottky Barrier Diodes (SBD)
MA3J745E (MA745WK)
Silicon epitaxial planar type
For switching
Features
Two elements are contained in one package, allowing highdensity
mounting
Low forward voltage VF , optimum for low voltage rectification
Optimum for high frequency rectification because of its short
reverse recovery time t
rr
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Single
Forward current
Double 20
Single
Peak forward current
Double 110
Junction temperature T
Storage time T
R
RM
I
F
I
FM
j
stg
30 V
30 V
30
150
125
–55 to +125
mA
mA
°C
°C
Package
Code
SMini3-F1
Pin Name
1: Anode 1
2: Anode 2
3: Cathode
Marking Symbol: M3D
Internal Connection
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
V
Reverse current I
Terminal capacitance C
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
4. *: trr measurement circuit
*
t
rr
η
= 1 mA 0.3 V
F1IF
= 30 mA 1.0
F2IF
VR = 30 V 30
R
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 W
VIN = 3 V
, f = 30 MHz
(peak)
RL = 3.9 kW, CL = 10 pF
1.0 ns
65 %
mA
Publication date: October 2008 SKH00233AED 1
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
10
–2
0 0.4 0.8 1.2 1.6 2.0 2.4
10
–1
1
10
10
2
10
3
Forward voltage VF (V
)
Forward current I
F
(
mA
)
Ta = 125°C
−20°C
75°C 25°C
10
−1
0 5 10 15 20 25 30
1
10
10
2
10
3
10
4
Reverse voltage VR (V
)
Reverse current I
R
(
µA
)
Ta = 125°C
75°C
25°C
0
0.2
0.4
0.6
0.8
1.0
−40 0 40 80 120 160
Ambient temperature Ta (°C
)
Forward voltage V
F
(
V
)
IF = 30 mA
10 mA
1 mA
10
−1
−40 0 40 80 120 160 200
1
10
10
2
10
3
10
4
Ambient temperature Ta (°C
)
Reverse current I
R
(
µA
)
VR = 30 V
3 V
1 V
0
0.8
1.6
2.4
3.2
0 10 20 30
Reverse voltage VR (V
)
Terminal capacitance C
t
(
pF
)
f = 1 MHz
Ta = 25°C
MA3J745E
IF VF IR VR VF T
IR Ta Ct V
R
a
2 SKH00233AED