Panasonic MA3J7420G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
R

s

= 50 Ω

Wave Form Analyzer
(SAS-8130)
R

i

= 50 Ω

t

p

= 2 µs

t

r

= 0.35 ns

δ = 0.05

I

F

= 10 mA

I

R

= 10 mA

R

L

= 100 Ω

10%

Input Pulse Output Pulse

I

rr

= 1 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

Schottky Barrier Diodes (SBD)

MA3J7420G

Silicon epitaxial planar type

For high speed switching

For wave detection

■ Features

•

Two MA3X716 is contained in one package (series connection)

•

Forward voltage VF , optimum for low voltage rectification

•

Optimum for high frequency rectification because of its short
reverse recovery time t

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage

Forward current Single I

Peak forward current

Junction temperature T

Storage temperature T

rr

R

V

RM

F

30 V

30 V

30 mA

Series 20

Single I

FM

150 mA

Series 110

j

stg

125 °C

−55 to +125 °C

■ Package

•

Code
SMini3-F2

•

Pin Name

1: Anode 1
2: Cathode 2
3: Cathode 1

Anode 2

■ Marking Symbol: M1U

■ Internal Connection

3

12

■ Electrical Characteristics Ta = 25°C ± 3°C

Forward voltage V

Reverse current I

Terminal capacitance C

Reverse recovery time

Detection efficiency η VIN = 3 V

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

Publication date:October 2007 SKH00197AED

Parameter Symbol Conditions Min Typ Max Unit

F1

V

F2

R

*

t

rr

IF = 1 mA 0.4 V

IF = 30 mA 1.0

VR = 30 V 1 µA

VR = 1 V, f = 1 MHz 1.5 pF

t

IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω

, f = 30 MHz 65 %

(peak)

RL = 3.9 kΩ, CL = 10 pF

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.

fep3.Absolute frequency of input and output is 2 GHz.

4.*: trr measurement circuit

1

MA3J7420G

3

10

I

F

This product complies with the RoHS Directive (EU 2002/95/EC).

 V

F

3

10

IR  V

R

VF  T

1.0

a

2

10

)

mA
(

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

Ta = 125°C −20°C

75°C 25°C

Forward voltage VF (V

IR  T

3

10

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

−2

10

−40 0 40 80 120 160 200

a

VR = 30 V
15 V

Ambient temperature Ta (°C

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

−2

10

)

0 5 10 15 20 25 30

Reverse voltage VR (V

Ct  V

2.4

)
pF

(

t

1.6

0.8

Ta = 125°C

R

75°C

25°C

)

f = 1 MHz

= 25°C

T

a

Terminal capacitance C

0.8

)
V

(

F

0.6

0.4

IF = 30 mA

Forward voltage V

0.2

0

−40 0 40 80 120 160

Ambient temperature Ta (°C

I

 T

(AV)

F

°C

I

F

t

p

)

A

(m

F(AV)

50

= 125

T

j

40

30

20

10

3 mA

1 mA

)

a

T

Forward current (Average) I

0

)

0 5 10 15 20 25 30

Reverse voltage VR (V

)

0

0DC40 16012080

Ambient temperature Ta (°C

)

2

SKH00197AED