Panasonic MA3J742 Datasheet
Schottky Barrier Diodes (SBD)
MA3J742
Silicon epitaxial planar type
For switching circuits
■ Features
•
Two MA3X716s are contained in one package (2-pin series
connection)
•
Optimum for low-voltage rectification because of its low forward
rise voltage (V
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
■ Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC) V
Peak reverse voltage V
Forward current
(DC)
Peak forward
current
Junction temperature T
Storage temperature T
Note) * : Value per chip
)
F
)
rr
Parameter Symbol Rating Unit
30 V
30 V
30 mA
Single I
R
RM
F
Double* 20
Single I
FM
150 mA
Double* 110
j
stg
125 °C
−55 to +125 °C
2.1 ± 0.1
1.25 ± 0.1
0.425 0.425
1
0.650.65
1.3 ± 0.1
2.0 ± 0.2
2
0.9 ± 0.1
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
Flat S-Mini Type Package (3-pin)
Marking Symbol: M1U
Internal Connection
1
2
− 0
+ 0.1
0.3
3
− 0.05
+ 0.1
0.15
EIAJ : SC-70
3
Unit : mm
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency h Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Pulse Generator
(PG-10N)
R
Bias Application Unit N-50BU
A
= 50 Ω
s
VR = 30 V 1 µA
IF = 1 mA 0.4 V
IF = 30 mA 1 V
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Input Pulse Output Pulse
t
t
p
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
t
rr
I
= 1 mA
rr
t
1
MA3J742
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Ta = 125°C − 20°C
F
Forward voltage VF (V
Ct V
2.4
2.0
)
pF
(
t
1.6
1.2
0.8
Terminal capacitance C
0.4
R
75°C 25°C
)
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160
a
IF = 30 mA
Ambient temperature Ta (°C
IR T
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
a
VR = 30 V
15 V
3 mA
1 mA
IR V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
)
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
0
0 5 10 15 20 25 30
Reverse voltage VR (V
2
−2
10
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
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