Panasonic MA3J741E, MA3J741D Datasheet
Schottky Barrier Diodes (SBD)
MA3J741D, MA3J741E
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.425 0.425
■ Features
•
Two MA3J741s are contained in one package (S-mini type 3-pin)
•
Low forward rise voltage (V
) and satisfactory wave detection
F
2.0 ± 0.2
efficiency (η)
•
Small temperature coefficient of forward characteristic
•
Extremely low reverse current I
R
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current
(DC)
Peak forward
current
Single I
Double* 20
Single I
*
Double
Junction temperature T
Storage temperature T
R
RM
F
FM
j
stg
Note) * : Value per hcip
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
V
Terminal capacitance C
Reverse recovery time
Detection efficiency η Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
*
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
30 V
30 V
30 mA
150 mA
110
125 °C
−55 to +125 °C
R
F1
F2
t
rr
VR = 30 V 1 µA
IF = 1 mA 0.4 V
IF = 30 mA 1 V
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1 ns
Irr = 1 mA, RL = 100 Ω
RL = 3.9 kΩ, CL = 10 pF
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
EIAJ : SC-70
Flat S-Mini Type Package
(3-pin)
Marking Symbol
•
MA3J741D : M2P
•
MA3J741E : M2R
Internal Connection
1
2
DE
, f = 30 MHz 65 %
(peak)
Input Pulse Output Pulse
t
t
p
r
10%
V
R
t
t
δ = 0.05
90%
= 2 µs
p
= 0.35 ns
r
t
I
F
0.650.65
1.3 ± 0.1
0.9 ± 0.1
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
1
2
3
1.25 ± 0.1
t
rr
I
= 1 mA
rr
2.1 ± 0.1
1
2
3
1
2
t
− 0
+ 0.1
0.3
3
− 0.05
+ 0.1
0.15
MA3J741D MA3J741E
Cathode 1
Anode 1
Cathode 2
Anode 2
Anode 1,2
Cathode 1,2
3
1
MA3J741D, MA3J741E
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
Ta = 125°C – 20°C
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
Ct V
3
)
pF
(
t
2
R
75°C 25°C
f = 1 MHz
= 25°C
T
a
VF T
IR T
a
a
IF = 30 mA
10 mA
1 mA
VR = 30 V
3 V
1 V
)
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
3
10
2
10
)
µA
(
R
10
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
IR V
R
Ta = 125°C
Reverse voltage VR (V
75°C
25°C
)
1
Terminal capacitance C
0
0 5 10 15 20 25 30
Reverse voltage VR (V
1
Reverse current I
−1
10
−2
10
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
2
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