Panasonic MA3J741, MA741 User Manual

Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3J741 (MA741)
Silicon epitaxial planar type
For switching
Features
Low forward voltage V
Small temperature coefficient of forward characteristic
Small reverse current I
and good wave detection efficiency η
F
R
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
V
Forward current I
Peak forward current I
Junction temperature T
Storage temperature T
R
RM
F
FM
j
stg
30 V
30 V
30 mA
150 mA
125 °C
55 to +125 °C
+0.1
132
(0.65)
1 : Anode
1.3
2.0
(0.65)
±0.1
±0.2
0.3
–0
±0.1
±0.1
2.1
1.25 5˚
0 to 0.1
0.9
0.15
±0.1
(0.15)
2 : N.C. 3 : Cathode EIAJ: SC-79 SMini3-F1 Package
Marking Symbol: M1L
Internal Connection
3
Unit: mm
+0.1 –0.05
(0.425)
1
2
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz. 4.*: t
Bias Application Unit (N-50BU)
A
Pulse Generator (PG-10N)
= 50
R
s
Wave Form Analyzer (SAS-8130) R
= 50
i
IF = 1 mA 0.4 V
IF = 30 mA 1.0
VR = 30 V 300 nA
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns Irr = 1 mA, RL = 100
= 3 V
IN
, f = 30 MHz 65 %
(peak)
RL = 3.9 k, CL = 10 pF
measurement circuit
rr
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
t
r
δ = 0.05
= 2 µs
= 0.35 ns
t
I
F
I
= 10 mA
F
= 10 mA
I
R
= 100
R
L
t
rr
I
= 1 mA
rr
t
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004 SKH00054BED
1
MA3J741
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
1
10
2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Ta = 125°C
F
75°C 25°C
Forward voltage VF (V
IR T
2
10
)
10
µA (
R
1
a
20°C
)
VR = 30 V 15 V
IR V
3
10
2
10
) µA
(
R
10
1
Reverse current I
1
10
2
10
0 5 10 15 20 25 30
R
Reverse voltage VR (V
Ct V
3
) pF
(
t
2
R
Ta = 125°C
75°C
25°C
)
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
) V
(
F
0.6
0.4
a
IF = 30 mA
Forward voltage V
0.2
0
40 0 40 80 120 160
Ambient temperature Ta
10 mA
1 mA
(°C)
1
Reverse current I
10
2
10
40 0 40 80 120 160 200
Ambient temperature Ta
(°C)
1
Terminal capacitance C
0
0 5 10 15 20 25 30
Reverse voltage VR (V
)
2
SKH00054BED
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