Panasonic MA3J741 Datasheet

Schottky Barrier Diodes (SBD)

MA3J741

Silicon epitaxial planar type

For switching circuits

■ Features

•

S-mini type package (3-pin) of MA3X704A

•

Low forward rise voltage (V
efficiency (η)

•

Small temperature coefficient of forward characteristic

•

Extremely low reverse current I

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Forward current (DC) I

Peak forward current I

Junction temperature T

Storage temperature T

) and satisfactory wave detection

F

R

R

RM

F

FM

j

stg

30 V

30 V

30 mA

150 mA

125 °C

−55 to +125 °C

2.1 ± 0.1

1.25 ± 0.1

0.425 0.425

1

0.650.65

1.3 ± 0.1

2.0 ± 0.2

2

0.9 ± 0.1

Flat S-Mini Type Package (3-pin)

Marking Symbol: M1L

Internal Connection

Unit : mm

− 0

+ 0.1

0.3

3

− 0.05

+ 0.1

0.15

1 : Anode
2 : NC
3 : Cathode

EIAJ : SC-70

1

3

2

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

R

F1

V

F2

Terminal capacitance C

Reverse recovery time

*

t

rr

Detection efficiency η Vin = 3 V

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment.

  2. Rated input/output frequency: 2 000 MHz

3. * : trr measuring instrument

Bias Application Unit N-50BU

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

VR = 30 V 300 nA

IF = 1 mA 0.4 V

IF = 30 mA 1 V

VR = 1 V, f = 1 MHz 1.5 pF

t

IF = IR = 10 mA 1 ns

Irr = 1 mA, RL = 100 Ω

, f = 30 MHz 65 %

(peak)

RL = 3.9 kΩ, CL = 10 pF

Input Pulse Output Pulse

t

t

p

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

r

10%

90%

V

R

t

p

t

= 0.35 ns

r

δ = 0.05

= 2 µs

t

I

F

= 10 mA

I

F

I

= 10 mA

R

= 100 Ω

R

L

t

rr

I

= 1 mA

rr

t

1

MA3J741

Schottky Barrier Diodes (SBD)

IF  V

3

10

2

10

)

mA

(

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

Ta = 125°C

F

Forward voltage VF (V

Ct  V

3

)
pF

(

t

2

R

75°C 25°C

− 20°C

f = 1 MHz

= 25

T

a

VF  T

IR  T

a

a

IF = 30 mA

10 mA

1 mA

VR = 30 V

15 V

)

1.0

0.9

0.8

)
V

(

0.7

F

0.6

0.5

0.4

0.3

Forward voltage V

0.2

0.1

0

)

°C

−40 0 40 80 120 160

Ambient temperature Ta (°C

2

10

)

10

µA
(

R

1

3

10

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

−2

10

0 5 10 15 20 25 30

IR  V

R

Ta = 125°C

Reverse voltage VR (V

75°C

25°C

)

1

Terminal capacitance C

0

0 5 10 15 20 25 30

Reverse voltage VR (V

−1

10

Reverse current I

−2

10

)

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

)

2