Panasonic MA3J7020G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3J7020G
Silicon epitaxial planar type
For high frequency rectification
■ Features
•
Forward current (Average) I
•
Small reverse current I
products)
= 500 mA rectification is possible
F(AV)
(About 1/10 of IR of the ordinary
R
■ Package
•
Code
SMini3-F2
•
Pin Name
1: Anode
2: N.C.
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
F(AV)
FSM
j
stg
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
20 V
20 V
500 mA
3A
125 °C
−55 to +125 °C
3: Cathode
■ Marking Symbol: M4R
■ Internal Connection
3
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R1
I
R2
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz. 4.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 10 mA 0.30 0.40 V
IF = 500 mA 0.50 0.55
VR = 5 V 1 µA
VR = 10 V 10
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 0.1 IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
= 2 µs
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
I
rr
rr
= 0.1 I
t
R
Publication date: October 2007 SKH00193AED
1
MA3J7020G
1
= 125°C
T
a
−1
10
)
A
(
F
−2
10
−3
10
Forward current I
−4
10
I
F
This product complies with the RoHS Directive (EU 2002/95/EC).
V
F
−20°C
75°C
25°C
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
IR V
R
T
a
= 125°C
75°C
25°C
0.8
)
0.6
V
(
F
0.4
Forward voltage V
0.2
VF T
a
= 500 mA
I
F
50 mA
5 mA
−5
10
0 0.2 0.4 0.6
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
V
= 20 V
R
10 V
6 V
3 V
)
Reverse current I
1
-1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
P
V
)
120
W
(m
00
1
R(AV)
80
60
40
20
0
Reverse power dissipation (Average) P
01020304050
R(AV)
Reverse voltage VR (V
R
DC
0.9
0.8
0.5
)
−1
10
0 5 10 15 20 25 30
Reverse voltage VR (V
80
)
pF
60
(
t
40
20
Terminal capacitance C
0
0102030
)
)
300
A
I
(m
F
250
F(AV)
200
150
100
50
0
Forward power dissipation (Average) P
0 300100 500 700
Ct V
Reverse voltage VR (V
P
I
F(AV)
t
p
T
0.5
0.2
0.1
Forward current (Average) I
R
F(AV)
DC
T
= 25°C
a
F(AV)
)
)
(mA)
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
I
t
)
A
(
F(surge)
3
10
2
10
10
1
F(surge)
W
T
t
Breakdown point (
Forward surge current I
-1
10
-1
10
101
Pulse width tW (ms
I
T
)
A
(m
600
500
F(AV)
400
300
200
100
F(AV)
DC
0.5
0.2
0.1
I
T
V
F
= 125
j
= 10 V
R
a
t
p
T
Forward current (Average) I
0
0 40 16012080
Ambient temperature Ta
= 25°C
a
W
)
°C
I
F(surge)
(°C)
typ.
)
)
2
10
2
SKH00193AED
Loading...