Panasonic MA3J702 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3J702 (MA10702)
Silicon epitaxial planar type
For high frequency rectification
■ Features
•
Forward current (Average) I
•
Small reverse current I
= 500 mA rectification is possible
F(AV)
(About 1/10 of IR of the ordinary
R
products)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
F(AV)
FSM
j
stg
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
20 V
20 V
500 mA
3A
125 °C
−55 to +125 °C
+0.1
0.3
–0
±0.1
±0.1
2.1
1.25
132
(0.65)
(0.65)
1.3
±0.1
±0.2
2.0
5˚
5˚
0 to 0.1
0.9
0.15
±0.1
(0.15)
1 : Anode
2 : N.C.
3 : Cathode SMini3-F1 Package
Marking Symbol: M4R
Internal Connection
3
Unit: mm
+0.1
–0.05
(0.425)
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R1
I
R2
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz. 4.*: t
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004 SKH00053BED
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
IF = 10 mA 0.30 0.40 V
IF = 500 mA 0.50 0.55
VR = 5 V 1 µA
VR = 10 V 10
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 0.1 IR, RL = 100 Ω
measurement circuit
rr
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
= 2 µs
t
I
F
I
= 100 mA
F
= 100 mA
I
R
= 100 Ω
R
L
t
I
rr
rr
= 0.1 I
t
R
Note) The part number in the parenthesis shows conventional part number.
1
MA3J702
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
1
= 125°C
T
a
−1
10
)
A
(
F
−2
10
−3
10
Forward current I
−4
10
−5
10
0 0.2 0.4 0.6
F
−20°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
V
= 20 V
R
10 V
6 V
3 V
75°C
25°C
)
IR V
4
10
3
10
)
µA
(
R
2
10
10
R
T
a
Reverse current I
1
−1
10
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
80
)
pF
60
(
t
40
R
= 125°C
75°C
25°C
T
= 25°C
a
VF T
0.8
)
0.6
V
(
F
0.4
Forward voltage V
0.2
0
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
I
F(surge)
)
A
(
F(surge)
3
10
2
10
10
a
= 500 mA
I
F
50 mA
5 mA
t
W
= 25°C
T
a
t
W
Breakdown point (
I
F(surge)
typ.
)
)
Reverse current I
1
-1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
20
Terminal capacitance C
1
Forward surge current I
0
0102030
)
Reverse voltage VR (V
)
-1
10
-1
10
Pulse width tW (ms
101
2
10
)
2
SKH00053BED
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