Panasonic MA3J7000G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3J7000G
Silicon epitaxial planar type
For high frequency rectification
■ Features
•
Forward current (Average) I
•
Optimum for high frequency rectification because of its short reverse recovery time t
rr
= 500 mA rectification is possible
F(AV)
■ Package
•
Code
SMini3-F2
•
Pin Name
1: Anode
2: N.C.
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
F(AV)
FSM
j
stg
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
40 V
40 V
500 mA
2A
125 °C
−55 to +150 °C
3: Cathode
■ Marking Symbol: M2V
■ Internal Connection
3
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz. 4.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
IF = 500 mA 0.55 V
VR = 35 V 100 µA
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
= 50 Ω
i
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
rr
= 0.1 I
t
R
Publication date: October 2007 SKH00192AED
1
MA3J7000G
3
10
= 100°C
T
a
2
10
)
mA
(
F
10
1
Forward current I
−1
10
I
F
This product complies with the RoHS Directive (EU 2002/95/EC).
V
F
−20°C
25°C
4
10
3
)
10
µA
(
R
2
10
Reverse current I
10
IR V
= 100°C
T
a
R
25°C
0.8
)
0.6
V
(
F
0.4
Forward voltage V
0.2
VF T
a
= 500 mA
I
F
100 mA
10 mA
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
IR T
4
10
= 15 V
V
R
3
)
10
µA
(
R
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
a
Ambient temperature Ta (°C
P
V
)
1
W
(m
1
R(AV)
200
000
800
600
400
R(AV)
R
1
)
0 102030405060
Reverse voltage VR (V
Ct V
80
)
pF
60
(
t
40
20
Terminal capacitance C
R
)
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
I
t
10
)
A
(
10
F(surge)
3
2
10
1
F(surge)
W
T
a
t
Non-repetitive
= 25°C
W
I
F(surge)
)
Forward surge current I
DC
0
)
0.9
0.8
0.5
0 102030405060
Reverse voltage VR (V
P
I
)
A
(m
F(AV)
300
250
200
150
100
F(AV)
I
F
θ
360°
180°
120°
60°
)
F(AV)
DC
)
A
(m
10
600
500
F(AV)
400
300
200
−1
DC
0.5
0.2
0.1
−1
Pulse width tW (ms
I
T
F(AV)
I
F
= 125
T
j
V
= 10 V
R
10110
)
a
t
p
T
°C
200
0
Reverse power dissipation (Average) P
01020304050
Reverse voltage VR (V
2
50
0
Forward power dissipation (Average) P
0 300100 500 700
)
Forward current (Average) I
F(AV)
(mA)
100
Forward current (Average) I
0
0 40 16012080
Ambient temperature Ta
(°C)
SKH00192AED
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