Panasonic MA3J700 Datasheet
Schottky Barrier Diodes (SBD)
MA3J700
Silicon epitaxial planar type
For high-frequency rectification
■ Features
•
S-mini type 3-pin package
•
Allowing to rectify under (I
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
rr
= 500 mA) condition
F(AV)
)
2.1 ± 0.1
1.25 ± 0.1
0.425 0.425
1
0.650.65
1.3 ± 0.1
2.0 ± 0.2
2
3
− 0
+ 0.1
0.3
Unit : mm
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
R
RRM
FSM
j
−55 to +150 °C
stg
500 mA
125 °C
40 V
40 V
2A
0.9 ± 0.1
Flat S-Mini Type Package (3-pin)
Marking Symbol: M2W
Internal Connection
− 0.05
+ 0.1
0.15
1 : Anode
2 : NC
3 : Cathode
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
VR = 35 V 100 µA
IF = 500 mA 0.55 V
F
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
= 2 µs
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
MA3J700
Schottky Barrier Diodes (SBD)
IF V
3
10
Ta = 100°C
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
− 20°C
Forward voltage VF (V
IR T
4
10
)
3
10
µA
(
R
2
10
a
25°C
)
VR = 15 V
VF T
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
a
IF = 500 mA
100 mA
10 mA
Ambient temperature Ta (°C
Ct V
80
70
)
pF
60
(
t
50
40
R
IR V
4
10
)
3
10
µA
(
R
2
10
10
Reverse current I
1
0 102030405060
)
1 000
300
)
A
(
100
F(surge)
30
10
Ta = 100°C
Reverse voltage VR (V
I
F(surge)
R
t
Non repetitive
25°C
)
W
Ta = 25°C
I
F(surge)
t
W
10
Reverse current I
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
30
20
Terminal capacitance C
10
0
)
0 102030405060
Reverse voltage VR (V
)
3
1
Forward surge current I
0.3
0.1
0.03
0.3 3 301010.1
Pulse width tW (ms
)
2
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