Panasonic MA3J143A, MA3J143 Datasheet

Switching Diodes
MA3J143, MA3J143A
Silicon epitaxial planar type
For switching circuits
Features
Small S-mini type package contained two elements, allowing high­density mounting
Two diodes are connected in series in the package
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse current
(DC)
Peak reverse
voltage
Forward current
(DC)
Peak forward
current
MA3J143
MA3J143A
MA3J143
MA3J143A
Single I
Series 65
Single I
Series 130
Junction temperature T
Storage temperature T
V
R
40
V
80
V
RM
40
V
80
F
FM
j
55 to +150 °C
stg
100
200
150 °C
mA
mA
Unit : mm
2.1 ± 0.1
1.25 ± 0.1
0.425 0.425
0
1
0.650.65
1.3 ± 0.1
2.0 ± 0.2
2
0.9 ± 0.1
Flat S-Mini Type Package (3-pin)
+ 0.1
0.3
3
0.05
+ 0.1
0.15
1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2
Marking Symbol
MA3J143 : MC MA3J143A : MP Internal Connection
1
3
2
Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC) V
Reverse voltage (DC)
Terminal capacitance C
Reverse recovery time
Note) *1: Between pins 2 and 3 *2: Between pins 1 and 3 *3:trr measuring circuit
MA3J143
MA3J143A
MA3J143
MA3J143A
3
*
Pulse Generator (PG-10N)
= 50
R
s
I
R
VR = 40 V 100 nA
VR = 80 V 100
IF = 100 mA 1.2 V
F
V
t1
C
t2
t
rr1
t
rr2
Bias Application Unit N-50BU
A
W.F.Analyzer (SAS-8130) R
IR = 100 µA40V
R
1
*
VR = 0 V, f = 1 MHz 5.5 pF
2
*
1
*
IF = 10 mA, VR = 6 V 150 ns
2
*
Irr = 0.1 · IR, RL = 100 9ns
= 50
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
80
= 10 mA
I
F
= 6 V
V
R
= 100
R
L
t
rr
I
rr
= 0.1 · I
3.0 pF
t
R
1
MA3J143, MA3J143A
Characteristics charts of MA3J143
IF V
1 000
100
)
mA (
F
10
1
Forward current I
0.1
F
Between pins 1 and 3
Ta = 150°C
100°C
25°C
20°C
1 000
100
)
Ta = 150°C
mA (
Forward current I
100°C
F
10
25°C
20°C
1
0.1
IF V
F
Between pins 2 and 3
Switching Diodes
100
10
) nA
(
R
1
0.1
Reverse current I
0.01
IR V
R
Between pins 2 and 3 Between pins 1 and 3
Ta = 150°C
100°C
25°C
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
T
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
40 0 40 80 120 160 200
a
Between pins 1 and 3
IF = 100 mA
Ambient temperature Ta (°C
V
6.0
5.0
)
pF
(
t
4.0
3.0
2.0
Terminal capacitance C
1.0
0
0 102030405060
R
f = 1 MHz T
Between pins 2 and 3
Between pins 1 and 3
Reverse voltage VR (V
10 mA
= 25°C
a
)
3 mA
)
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
VF T
1.6
1.4
)
1.2
V (
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
)
40 0 40 80 120 160 200
Ambient temperature Ta (°C
1 000
300
) A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03
Between pins 2 and 3
I
t
F(surge)
Between pins 2 and 3
Between pins 1 and 3
0.3 3 301010.1
Pulse width tW (ms
)
a VF
IF = 100 mA
10 mA
3 mA
W Ct
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
)
0.001 0 102030405060
Reverse voltage VR (V
IR T
100
10
) nA
(
R
1
0.1
Reverse current I
0.01
0.001
40 0 40 80 120 160 200
a
VR = 75 V
Between pins 2 and 3
Between pins 1 and 3 Between pins 2 and 3 Between pins 1 and 3 Between pins 2 and 3 Between pins 1 and 3
Ambient temperature Ta (°C
)
35 V
6 V
)
2
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