Panasonic MA3J142E Datasheet

Switching Diodes

1.25 ± 0.1

1.3 ± 0.1

2.0 ± 0.2

0.9 ± 0.1

0.650.65

0.425 0.425

0.3

+ 0.1

− 0

2.1 ± 0.1

0.15

+ 0.1

− 0.05

1

2

3

MA3J142E

Silicon epitaxial planar type

For switching circuits

■ Features

•

Small S-mini type package contained two elements, allowing high­density mounting

•

Short reverse recovery time t

•

Small terminal capacitance, C

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Forward current

(DC)

Peak forward

current

Non-repetitive peak

forward surge current

Junction temperature T

Storage temperature T

Note) * : t = 1 s

Single I

Double 150

Single I

Double 340

Single I

*

Double 750

rr

t

R

RM

F

FM

FSM

j

stg

80 V

80 V

100

225

500

mA

mA

mA

150 °C

−55 to +150 °C

Unit : mm

1 : Anode 1
2 : Anode 2
3 : Cathode 1
Cathode 2

Flat S-Mini Type Package (3-pin)

Marking Symbol: MU

Internal Connection

1

3

2

■ Electrical Characteristics Ta = 25°C

Reverse current (DC) I

Forward voltage (DC) V

Reverse voltage (DC) V

Terminal capacitance C

Reverse recovery time

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

Parameter Symbol Conditions Min Typ Max Unit

R

*

t

rr

VR = 75 V 100 nA

IF = 100 mA 1.2 V

F

IR = 100 µA80V

R

VR = 0 V, f = 1 MHz 2 pF

t

IF = 10 mA, VR = 6 V 3 ns

Irr = 0.1 · IR, RL = 100 Ω

Bias Application Unit N-50BU

Pulse Generator
(PG-10N)

= 50 Ω

R

s

A

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= 10 mA

I

F

= 6 V

V

R

= 100 Ω

R

L

t

rr

I

= 0.1 · I

rr

t

R

1

MA3J142E

Switching Diodes

IF  V

3

10

2

10

)

mA

(

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Ta = 150°C

Forward voltage VF (V

 T

5

10

4

10

)

nA

(

R

3

10

2

10

Reverse current I

10

1

−40 0 40 80 120 160 200

a

VR = 5 V

Ambient temperature Ta (°C

100°C

25°C

− 20°C

)

35 V
6 V

IR  V

Ta = 150°C

Ct  V

R

100°C

25°C

R IR

)

f = 1 MHz

= 25°C

T

a

)

1.6

1.4

)

1.2

V
(

F

1.0

0.8

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

1 000

300

)
A

(

100

F(surge)

30

10

3

1

Forward surge current I

0.3

0.1

0.03

5

10

4

10

)
nA

(

R

3

10

2

10

Reverse current I

10

1

0 20406080100120

Reverse voltage VR (V

1.2

1.0

)
pF

(

t

0.8

0.6

0.4

Terminal capacitance C

0.2

0

)

0 20406080100120

Reverse voltage VR (V

VF  T

a

IF = 100 mA

I

 t

F(surge)

0.3 3 301010.1

W

Ta = 25°C

t

Non repetitive

Pulse width tW (ms

W

10 mA

3 mA

I

F(surge)

)

)

2