Panasonic MA3J142A, MA3J142K User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3J142A (MA142A), MA3J142K (MA142K)
Silicon epitaxial planar type
For switching circuits
■ Features
• Allowing high-density mounting
• Short reverse recovery time t
• Small terminal capacitance C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current I
Peak forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note)*:t = 1 s
*
rr
t
R
RM
F
FM
FSM
j
stg
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
80 V
80 V
+0.1
0.3
–0
132
(0.65)
(0.65)
1.3
±0.1
±0.2
2.0
5˚
EIAJ: SC-79
SMini3-F1 Package
±0.1
±0.1
2.1
1.25
5˚
0 to 0.1
MA3J142A MA3J142K
1 Cathode Anode
2 N.C. N.C.
3 Anode Cathode
Unit: mm
+0.1
0.15
–0.05
(0.425)
±0.1
0.9
(0.15)
Marking Symbol:
• MA3J142A: MB • MA3J142K: MI
Internal Connection
3
3
12
A
12
K
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
Terminal capacitance
MA3J142A
F
R
R
C
MA3J142K
Reverse recovery time *MA3J142A
t
rr
MA3J142K
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 15 pF
t
2
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 Ω 3
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004 SKF00017BED
1
MA3J142A, MA3J142K
This product complies with the RoHS Directive (EU 2002/95/EC).
Characteristics charts of MA3J142A
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
V
= 75 V
R
a
)
nA
(
4
10
3
10
R
2
10
10
Ta = 150°C
100°C
25°C
−20°C
)
35 V
6 V
IR V
T
a
R
= 150°C
100°C
)
nA
(
4
10
3
10
R
2
10
10
Reverse current I
1
−1
10
0 20 40 60 80 100 120
Reverse voltage VR (V
Ct V
3.2
)
pF
2.4
(
t
1.6
R
25°C
f = 1 MHz
= 25°C
T
a
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
)
Ambient temperature Ta (°C
I
10
)
A
(
10
F(surge)
3
2
10
F(surge)
a
t
= 100 mA
I
F
10 mA
3 mA
)
W
= 25°C
T
a
I
F(surge)
t
W
Non repetitive
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
0.8
Terminal capacitance C
0
0 20 40 60 80 100 120
)
Reverse voltage VR (V
)
1
Forward surge current I
−1
10
−1
Pulse width tW (ms
10110
)
2
SKF00017BED
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