Panasonic MA3J142A, MA3J142K User Manual

Page 1
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3J142A (MA142A), MA3J142K (MA142K)
Silicon epitaxial planar type
Features
Allowing high-density mounting
Short reverse recovery time t
Small terminal capacitance C
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current I
Peak forward current I
Non-repetitive peak forward I surge current
Junction temperature T
Storage temperature T
Note)*:t = 1 s
*
rr
t
R
RM
F
FM
FSM
j
stg
100 mA
225 mA
500 mA
150 °C
55 to +150 °C
80 V
80 V
+0.1
0.3
–0
132
(0.65)
(0.65)
1.3
±0.1
±0.2
2.0
EIAJ: SC-79 SMini3-F1 Package
±0.1
±0.1
2.1
1.25 5˚
0 to 0.1
MA3J142A MA3J142K 1 Cathode Anode 2 N.C. N.C. 3 Anode Cathode
Unit: mm
+0.1
0.15
–0.05
(0.425)
±0.1
0.9
(0.15)
Marking Symbol:
MA3J142A: MB MA3J142K: MI
Internal Connection
3
3
12
A
12
K
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
Terminal capacitance
MA3J142A
F
R
R
C
MA3J142K
Reverse recovery time *MA3J142A
t
rr
MA3J142K
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator (PG-10N)
= 50
R
s
Wave Form Analyzer (SAS-8130) R
= 50
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 15 pF
t
2
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 3
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
V
R
R
L
t
rr
I
rr
= 6 V = 100
= 0.1 I
t
R
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004 SKF00017BED
1
Page 2
MA3J142A, MA3J142K
This product complies with the RoHS Directive (EU 2002/95/EC).
Characteristics charts of MA3J142A
IF V
3
10
2
10
)
mA (
F
10
1
Forward current I
1
10
2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
V
= 75 V
R
a
) nA
(
4
10
3
10
R
2
10
10
Ta = 150°C
100°C
25°C
20°C
)
35 V
6 V
IR V
T
a
R
= 150°C
100°C
) nA
(
4
10
3
10
R
2
10
10
Reverse current I
1
1
10
0 20 40 60 80 100 120
Reverse voltage VR (V
Ct V
3.2
) pF
2.4
(
t
1.6
R
25°C
f = 1 MHz
= 25°C
T
a
VF T
1.6
)
1.2
V (
F
0.8
Forward voltage V
0.4
0
40 0 40 80 120 160 200
)
Ambient temperature Ta (°C
I
10
) A
(
10
F(surge)
3
2
10
F(surge)
a
t
= 100 mA
I
F
10 mA
3 mA
)
W
= 25°C
T
a
I
F(surge)
t
W
Non repetitive
Reverse current I
1
1
10
40 0 40 80 120 160 200
Ambient temperature Ta (°C
0.8
Terminal capacitance C
0
0 20 40 60 80 100 120
)
Reverse voltage VR (V
)
1
Forward surge current I
1
10
1
Pulse width tW (ms
10110
)
2
SKF00017BED
Page 3
Characteristics charts of MA3J142K
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3J142A, MA3J142K
IF V
3
10
2
10
= 150°C
T
)
a
mA (
Forward current I
100°C
F
10
10
25°C
10
20°C
1
1
2
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
V
= 75 V
R
a
) nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
6 V
)
35 V
IR V
R
) nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
1
0 20 40 60 80 100 120
Reverse voltage VR (V
Ct V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
R
= 150°C
T
a
100°C
25°C
)
f = 1 MHz
= 25°C
T
a
VF T
1.6
)
1.2
V (
F
0.8
Forward voltage V
0.4
0 –40 0 40 80 120 160 200
a
= 100 mA
I
F
Ambient temperature Ta (°C
I
t
) A
(
F(surge)
3
10
2
10
10
1
F(surge)
W
T
a
t
W
Non repetitive
Forward surge current I
10 mA
3 mA
= 25°C
I
F(surge)
)
1
40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
0
0 20406080100120
Reverse voltage VR (V
)
SKF00017BED
1
10
1
Pulse width tW (ms
10110
)
3
Page 4
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod­ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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