Panasonic MA3G762 Datasheet
Schottky Barrier Diodes (SBD)
123
MA3G762
Silicon epitaxial planar type (cathode common)
For switching power supply
Unit : mm
15.0 ± 0.5
7.2 ± 0.3
0.7 ± 0.115.0 ± 0.2
5.0 ± 0.2
3.2 ± 0.2
■ Features
•
Forward current (average) I
•
Repetitive peak reverse voltage V
•
High reliability caused by sealed in the TOP-3F (Full-pack
F(AV)
: 20 A type
: 90 V type
RRM
package)
•
Cathode common dual type
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
RRM
FSM
−40 to +125 °C
j
−40 to +125 °C
stg
90 V
20 A
130 A
Note) * : Sine half-wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Thermal resistance R
th(j-c)
Note) Rated input/output frequency: 100 MHz
R
VR = 90 V 5 mA
IF = 10 A 0.85 V
F
Direct current (between junction and case)
φ 3.2 ± 0.1
21.0 ± 0.516.2 ± 0.5
0.3
3.5 ±
Solder Dip
12.7 ± 0.3
TOP-3F (TO-3F Full-Pack Package )
2.0 ± 0.1
1.1 ± 0.1
5.45 ± 0.3
10.9 ± 0.5
321
Marking Symbol: MA3G762
Internal Connection
2.0 ± 0.1
+ 0.2
0.6
− 0.1
1 : Anode
2 : Cathode
(Common)
3 : Anode
1.5 °C/W
1
MA3G762
Schottky Barrier Diodes (SBD)
IF V
2
10
10
)
Ta = 125°C
A
(
F
1
−1
10
Forward current I
−2
10
−3
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
100°C
25°C
Forward voltage VF (V
I
T
32
)
28
A
(
24
F(AV)
20
16
12
8
Average forward current I
4
F(AV)
t0 / t1 = 1/2
1/3
1/6
P
IR V
2
10
10
)
mA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
)
C
t
0
t
1
DC
0 20406080100120
Reverse voltage VR (V
R
Ta = 125°C
100°C
25°C
)
40
)
35
W
(
30
D(AV)
25
20
15
10
Average forward power P
5
0
0 4 8 12 16 20 24
Average forward current I
D(AV)
t
t
0
1
I
F(AV)
t0 / t1 = 1/6
1/3
1/2
DC
(A
F(AV)
)
0
20 40 60 80 100 120 140
Case temperature TC (°C
2
)
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