Panasonic MA3G751A, MA3G751 Datasheet
Schottky Barrier Diodes (SBD)
123
MA3G751, MA3G751A
Silicon epitaxial planar type (cathode common)
For switching power supply
15.0 ± 0.3
11.0 ± 0.2
Unit : mm
5.0 ± 0.2
3.2
■ Features
•
Forward current (average) I
•
High reliability caused by sealed in the TOP-3F (Full-pack
F(AV)
: 20 A type
package)
•
Cathode common dual type
•
Low forward rise voltage V
F
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak
reverse voltage
MA3G751
MA3G751A
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
Note) * : Half sine-wave: 10 ms/cycle
V
F(AV)
RRM
FSM
−40 to +125 °C
j
−40 to +125 °C
stg
40 V
45
20 A
150 A
φ 3.2 ± 0.1
21.0 ± 0.516.2 ± 0.5
3.5 0.715.0 ± 0.2
12.5
Solder Dip
10.9 ± 0.5
2.0 ± 0.2
1.1 ± 0.1
5.45 ± 0.3
321
TOP-3F (TOP-3 Full-Pack Package )
Marking Symbol
•
MA3G751 : MA3G751
•
MA3G751A : MA3G751A
Internal Connection
2.0 ± 0.1
0.6 ± 0.2
1 : Anode
2 : Cathode
(Common)
3 : Anode
■ Electrical Characteristics Ta = 25°C
Reverse current (DC)
Forward voltage (DC) V
Thermal resistance R
Note) Rated input/output frequency: 100 MHz
Parameter Symbol Conditions Min Typ Max Unit
MA3G751
MA3G751A
I
R
F
th(j-c)
VR = 40 V 5 mA
VR = 45 V 5
IF = 10 A 0.55 V
Direct current (between junction and case)
1.5 °C/W
1
MA3G751, MA3G751A
Schottky Barrier Diodes (SBD)
IF V
100
Ta = 125°C
)
10
A
(
F
1
Forward current I
0.1
0.01
25°C
100°C
0 0.2 0.4 0.6 1.00.8 1.2
F
Forward voltage VF (V
I
T
32
)
28
A
(
24
F(AV)
20
16
12
8
Average forward current I
4
F(AV)
t0 / t1 = 1/2
1/3
1/6
P
IR V
125°C
100°C
25°C
R
)
30
)
W
25
(
D(AV)
20
15
10
5
Average forward power P
0
0 4 8 12 16 20 24
Average forward current I
6
10
5
10
)
µA
(
4
10
R
3
10
2
10
Ta = 150°C
Reverse current I
10
1
0 102030405060
)
C
t
0
t
1
DC
Reverse voltage VR (V
D(AV)
t
t
0
1
I
F(AV)
t0 / t1 = 1/6
F(AV)
1/3
1/2
DC
(A
)
0
20 40 60 80 100 120 140
Case temperature TC (°C
2
)
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