Unit
µA
mA
V
ns
˚C/W
˚C/W
Condition
V
RRM
= 300V, TC= 25˚C
V
RRM
= 300V, Tj=150˚C
I
F
= 2.5A, TC= 25˚C
I
F
=1A, IR=1A
Flat direct current between junction and case
Symbol
I
RRM1
I
RRM2
V
F
trr*
R
th(j-c)
R
th(j-a)
■ Electrical Characteristics (Ta= 25˚C)
Note 1. Rated input/output frequency : 10MHz
2. * trr measuring circuit
* Sine half wave : 10ms/cycle
Unit
V
V
A
A
˚C
˚C
Rating
300
300
5
45
– 40 to +150
– 40 to +150
Symbol
V
RRM
V
RSM
I
F(AV)
I
FSM
*
T
j
T
stg
MA653
Silicon planer type (cathode common)
For switching
■ Features
●
High reverse voltage V
R
●
Low forward voltage V
F
●
Fast reverse recovery time t
rr
■ Absolute Maximum Ratings (Ta= 25˚C)
Unit : mm
■ Internal Connection
1 : Anode
2 : Cathode
(common)
3 : Anode
TO-220F(a) (TO-220 Full-Pack Package)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Fast Recovery Diodes (FRD) MA111
Parameter
Repetitive peak reverse current
Forward voltage (DC)
Reverse recovery time
Thermal resistance
min typ max
100
6
1
100
3
63
50Ω 50Ω
5.5Ω
D.U.T
t
rr
0.1 × I
R
I
F
I
R
123
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
-
0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
ø3.1±0.1
I
F(AV)
– T
C
P
D(AV)
– I
F(AV)
IR – V
R
IF – V
F
R
th(t)
– t
Fast Recovery Diodes (FRD) MA653
0.01
0 0.4 0.8 1.2 1.6 2.0
0.1
1
10
100
Ta=150˚C
100˚C
25˚C
Forward voltage VF (V
)
Forward current I
F
(
A
)
10
2
0 50 100 150 200 250 300
10
8
10
7
10
6
10
5
10
4
10
3
Ta=150˚C
100˚C
25˚C
Reverse voltage V
R
(V)
Reverse current I
R
(
nA
)
Average forward current I
F(AV)
(A
)
Average forward current P
D(AV)
(
W
)
0
12
10
8
6
4
2
0123456
t0/t1=1/6
1/3
1/2
t
1
t
0
DC
Case temperature TC (˚C
)
Average forward current I
F(AV)
(
A
)
0
2
1
3
5
4
6
30 50 100 150
t0/t1=1/2
1/3
t
1
t
0
1/6
DC
Time t (s
)
Thermal resistance R
th
(
˚C/W
)
10
–2
10
–1
1
10
10
2
10
–4
10
–3
10
–2
10
–1
11010
2103
10
4
Without heat sink