MA649
Silicon planer type (cathode common)
For switching
■ Features
●
High reverse voltage V
R
●
Low forward voltage V
F
●
Fast reverse recovery time t
rr
■ Absolute Maximum Ratings (Ta= 25˚C)
Unit : mm
1 : Anode
2 : Cathode
(common)
3 : Anode
TO-220F(a) (TO-220 Full-Pack Package)
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
-
0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
ø3.1±0.1
Condition
V
RRM
= 200V, TC= 25˚C
V
RRM
= 200V, Tj=150˚C
I
F
= 2.5A, TC= 25˚C
I
F
=1A, IR=1A
Flat direct current between junction and case
Unit
µA
mA
V
ns
˚C/W
˚C/W
Symbol
I
RRM1
I
RRM2
V
F
trr*
R
th(j-c)
*
R
th(j-a)
Note 1. Rated input/output frequency : 10MHz
2. * trr measuring circuit
■ Electrical Characteristics (Ta= 25˚C)
Unit
V
V
A
A
˚C
˚C
* Sine half wave : 10ms/cycle
Symbol
V
RRM
V
RSM
I
F(AV)
I
FSM
*
T
j
T
stg
Rating
200
200
5
30
– 40 to +150
– 40 to +150
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Fast Recovery Diodes (FRD) MA111
Parameter
Repetitive peak reverse current
Forward voltage (DC)
Reverse recovery time
Thermal resistance
min typ max
100
6
1
100
3
63
50Ω 50Ω
5.5Ω
D.U.T
t
rr
0.1 × I
R
I
F
I
R
■ Internal Connection
123
I
F(AV)
– T
C
P
D(AV)
– I
F(AV)
IR – V
R
IF – V
F
Fast Recovery Diodes (FRD) MA649
R
th(t)
– t
Time t (s
)
Thermal resistance R
th
(
˚C/W
)
10
–2
10
–1
1
10
10
2
10
–4
10
–3
10
–2
10
–1
11010
2103
10
4
Without heat sink
10
0 50 100 150 200 250 300
10
7
10
6
10
5
10
4
10
3
10
2
Ta=150˚C
100˚C
25˚C
Reverse voltage V
R
(V)
Reverse current I
R
(
nA
)
Average forward current I
F(AV)
(A
)
Average forward current P
D(AV)
(
W
)
0
12
10
8
6
4
2
0123456
t0/t1=1/6
1/3
1/2
t
1
t
0
DC
Case temperature TC (˚C
)
Average forward current I
F(AV)
(
A
)
0
2
1
3
5
4
6
30 50 100 150
t0/t1=1/2
1/3
t
1
t
0
1/6
DC
0.01
0 0.4 0.8 1.2 1.6 2.0
0.1
1
10
100
TC=25˚C
Ta=150˚C
100˚C
25˚C
Forward voltage V
F
(V
)
Forward current I
F
(
A
)