Panasonic MA3D798 Datasheet
Schottky Barrier Diodes (SBD)
MA3D798
Silicon epitaxial planar type (cathode common)
For switching power supply
9.9 ± 0.3
4.6 ± 0.2
Unit : mm
2.9 ± 0.2
■ Features
•
TO-220D package
•
Allowing to rectify under (I
•
Cathode common dual type
•
Low V
(forward voltage) type: VF < 0.47 V (at IF = 10 A)
F
= 20 A) condition
F(AV)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
RRM
FSM
−40 to +125 °C
j
−40 to +125 °C
stg
120 A
Note) * : Half sine-wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
High voltage rectification R
R
F
th(j-c)
3.0 ± 0.5
φ 3.2 ± 0.1
15.0 ± 0.513.7 ± 0.2
1.4 ± 0.2
1
23
1.6 ± 0.2
0.8 ± 0.1
2.54 ± 0.3
5.08 ± 0.5
4.2 ± 0.2
2.6 ± 0.1
0.55 ± 0.15
30 V
20 A
1 : Anode
2 : Cathode (common)
3 : Anode
TO-220D package
VR = 30 V 5 mA
IF = 10 A 0.47 V
Direct current (between junction and case)
3 °C/W
Note) Rated input/output frequency: 150 MHz
1
MA3D798
Schottky Barrier Diodes (SBD)
IF V
2
10
75°C 25°C
Ta = 125°C
10
)
A
(
F
1
−1
10
Forward current I
−2
10
–3
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
– 20°C
Forward voltage VF (V
VF T
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
a
IF = 10 A
5 A
1 A
IR V
3
10
2
10
)
mA
(
R
10
1
Reverse current I
−1
10
−2
10
)
0 102030405060
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
2
10
10
)
mA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
−40 0 40 80 120 160 200
IR T
a
VR = 30 V
20 V
10 V
Ambient temperature Ta (°C
)
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
)
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