Panasonic MA3D798 Datasheet

Schottky Barrier Diodes (SBD)

MA3D798

Silicon epitaxial planar type (cathode common)

For switching power supply

9.9 ± 0.3

4.6 ± 0.2

Unit : mm

2.9 ± 0.2

■ Features

•

TO-220D package

•

Allowing to rectify under (I

•

Cathode common dual type

•

Low V

(forward voltage) type: VF < 0.47 V (at IF = 10 A)

F

= 20 A) condition

F(AV)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Repetitive peak reverse voltage

Average forward current I

Non-repetitive peak forward I

surge current

*

Junction temperature T

Storage temperature T

V

F(AV)

RRM

FSM

−40 to +125 °C

j

−40 to +125 °C

stg

120 A

Note) * : Half sine-wave; 10 ms/cycle

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

High voltage rectification R

R

F

th(j-c)

3.0 ± 0.5

φ 3.2 ± 0.1

15.0 ± 0.513.7 ± 0.2

1.4 ± 0.2

1

23

1.6 ± 0.2

0.8 ± 0.1

2.54 ± 0.3

5.08 ± 0.5

4.2 ± 0.2

2.6 ± 0.1

0.55 ± 0.15

30 V

20 A

1 : Anode
2 : Cathode (common)
3 : Anode

TO-220D package

VR = 30 V 5 mA

IF = 10 A 0.47 V

Direct current (between junction and case)

3 °C/W

Note) Rated input/output frequency: 150 MHz

1

MA3D798

Schottky Barrier Diodes (SBD)

IF  V

2

10

75°C 25°C

Ta = 125°C

10

)
A

(

F

1

−1

10

Forward current I

−2

10

–3

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

– 20°C

Forward voltage VF (V

VF  T

0.8

0.7

)

0.6

V
(

F

0.5

0.4

0.3

0.2

Forward voltage V

0.1

a

IF = 10 A

5 A

1 A

IR  V

3

10

2

10

)

mA
(

R

10

1

Reverse current I

−1

10

−2

10

)

0 102030405060

Reverse voltage VR (V

R

Ta = 125°C

75°C

25°C

)

2

10

10

)

mA
(

R

1

−1

10

Reverse current I

−2

10

−3

10

−40 0 40 80 120 160 200

IR  T

a

VR = 30 V

20 V
10 V

Ambient temperature Ta (°C

)

0

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

2

)