Schottky Barrier Diodes (SBD)
MA3D755
Silicon epitaxial planar type (cathode common)
For switching power supply
9.9 ± 0.3
4.6 ± 0.2
Unit : mm
2.9 ± 0.2
■ Features
•
Low forward rise voltage V
•
TO-220D (Full-pack package) with high dielectric breakdown
F
voltage > 5.0 kV
•
Easy-to-mount, caused by its V cut lead end
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
RRM
FSM
−40 to +125 °C
j
−40 to +125 °C
stg
60 V
5A
90 A
Note) * : Half sine-wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Thermal resistance R
th(j-c)
Note) Rated input/output frequency: 200 MHz
R
VR = 60 V 1 mA
IF = 2.5 A 0.58 V
F
Direct current (between junction and case)
15.0 ± 0.513.7 ± 0.2
1.4 ± 0.2
1
23
1.6 ± 0.2
0.8 ± 0.1
2.54 ± 0.3
5.08 ± 0.5
4.2 ± 0.2
Internal Connection
3.0 ± 0.5
φ 3.2 ± 0.1
2.6 ± 0.1
0.55 ± 0.15
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
3 °C/W
1
MA3D755
Schottky Barrier Diodes (SBD)
IF V
10
75°C 25°C
Ta = 125°C
1
)
A
(
F
−1
10
−2
10
Forward current I
−3
10
−4
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
−20°C
Forward voltage VF (V
IR T
2
10
10
)
mA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
−40 0 40 80 120 160 200
a
VR = 60 V
Ambient temperature Ta (°C
30 V
10 V
VF T
Ct V
a
IF = 2.5 A
1 A
100 mA
R
f = 1 MHz
T
= 25°C
a
)
)
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
)
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
800
700
)
pF
600
(
t
500
400
300
200
Terminal capacitance C
100
0
0 102030405060
Reverse voltage VR (V
2
10
10
)
mA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 102030405060
20
)
W
(
15
D(AV)
10
5
Average forward power P
0
0123456
Average forward current I
IR V
R
Ta = 125°C
Reverse voltage VR (V
P
I
D(AV)
F(AV)
t0 / t1 = 1/6
F(AV)
)
75°C
25°C
t
0
t
1
1/3
1/2
DC
(A
)
I
T
8
)
7
A
(
6
F(AV)
5
4
3
2
Average forward current I
1
0
20 40 60 80 100 120 140
F(AV)
Case temperature TC (°C
2
C
t0 / t1 = 1/2
1/3
1/6
DC
t
0
t
1
)