Schottky Barrier Diodes (SBD)
MA3D752, MA3D752A
Silicon epitaxial planar type (cathode common)
For switching power supply
9.9 ± 0.3
4.6 ± 0.2
Unit : mm
2.9 ± 0.2
■ Features
•
Low forward rise voltage V
•
TO-220D (Full-pack package) with high dielectric breakdown
F
voltage > 5.0 kV
•
Easy-to-mount, caused by its V cut lead end
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak
reverse voltage
Non repetitive peak
reverse voltage
MA3D752
MA3D752A
MA3D752
MA3D752A
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
V
F(AV)
RRM
RSM
FSM
−40 to +125 °C
j
−40 to +125 °C
stg
40 V
45
40 V
45
20 A
120 A
Note) * : Half sine-wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC) V
Thermal resistance R
Note) Rated input/output frequency: 100 MHz
MA3D752
MA3D752A
I
R
F
th(j-c)
VR = 40 V, TC = 25°C5mA
VR = 45 V, TC = 25°C5
IF = 10 A, TC = 25°C 0.55 V
Direct current (between junction and case)
φ 3.2 ± 0.1
15.0 ± 0.513.7 ± 0.2
1.4 ± 0.2
1
23
1.6 ± 0.2
0.8 ± 0.1
2.54 ± 0.3
5.08 ± 0.5
4.2 ± 0.2
Internal Connection
3.0 ± 0.5
2.6 ± 0.1
0.55 ± 0.15
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
3 °C/W
1
MA3D752, MA3D752A
Schottky Barrier Diodes (SBD)
IF V
2
10
75°C 25°C
Ta = 125°C
10
(A)
F
1
−1
10
Forward current I
−2
10
−3
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
−20°C
Forward voltage VF (V
IR T
2
10
10
)
mA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
−40 0 40 80 120 160 200
a
VR = 45 V
20 V
10 V
Ambient temperature Ta (°C
VF T
Ct V
a
IF = 20 A
10 A
5 A
R
f = 1 MHz
T
= 25°C
a
)
)
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
)
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
1 600
1 400
)
pF
1 200
(
t
1 000
800
600
400
Terminal capacitance C
200
0
0 102030405060
Reverse voltage VR (V
2
10
10
)
mA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 102030405060
40
)
W
(
30
D(AV)
20
10
Average forward power P
0
0 4 8 12162024
Average forward current I
IR V
R
Ta = 125°C
Reverse voltage VR (V
P
I
D(AV)
F(AV)
t0 / t1 = 1/6
F(AV)
75°C
25°C
)
t
0
t
1
1/3
1/2
DC
(A
)
I
T
32
)
28
A
(
24
F(AV)
20
16
12
8
Average forward current I
4
0
20 40 60 80 100 120 140
F(AV)
t0 / t1 = 1/2
1/3
1/6
Case temperature TC (°C
2
DC
C
t
0
t
1
)