Panasonic MA3D691 Datasheet
Fast Recovery Diodes (FRD)
MA3D691
Silicon planar type
For high-frequency rectification
9.9 ± 0.3
4.6 ± 0.2
Unit : mm
2.9 ± 0.2
■ Features
•
Low forward rise voltage V
•
Fast reverse recovery time t
•
TO-220D (Full-pack package) with high dielectric breakdown
F
rr
voltage > 5.0 kV
•
Easy-to-mount, caused by its V cut lead end
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
Non-repetitive peak reverse V
V
RRM
RSM
200 V
200 V
surge voltage
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
F(AV)
FSM
j
stg
10 A
70 A
−40 to +150 °C
−40 to +150 °C
Note) * : Half sine-wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Repetitive peak reverse current I
RRM1
I
RRM2
Forward voltage (DC) V
Reverse recovery time
Thermal resistance R
*
R
t
rr
th(j-c)
th(j-a)
Note) 1. Rated input/output frequency: 10 MHz
2. Tightening torque-max. 8 kg × cm
3. * : trr measuring circuit
V
= 200 V, TC = 25°C 100 µA
RRM
V
= 200 V, Tj = 150°C10mA
RRM
IF = 10 A, TC = 25°C 1.00 V
F
IF = 1 A, IR = 1 A 100 ns
3.0 ± 0.5
φ 3.2 ± 0.1
15.0 ± 0.513.7 ± 0.2
4.2 ± 0.2
1
− 0.4
+ 0
1.5
1.4 ± 0.2
0.8 ± 0.1
5.08 ± 0.5
2.54 ± 0.3
2
TO-220D Package (2-pin)
2.6 ± 0.1
0.55 ± 0.15
1 : Cathode
2 : Anode
3 °C/W
63 °C/W
50 Ω
D.U.T
5.5 Ω
50 Ω
t
rr
I
F
0.1 × I
I
R
R
1
MA3D691
Fast Recovery Diodes (FRD)
IF V
10
Ta = 150°C
1
)
A
(
−1
10
F
−2
10
−3
10
F
Forward current I
−4
10
−5
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
−20°C
100°C
25°C
VF T
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
a
IF = 10 A
5 A
1 A
)
500
)
400
pF
(
t
300
200
100
Terminal capacitance C
0
0 50 100 150 200 250 300
Ct V
R
Reverse voltage VR (V
)
2
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