Panasonic MA3D654 Datasheet

Fast Recovery Diodes (FRD)

123

MA3D654

Silicon planar type (cathode common)

For high-frequency rectification

■ Features

•

Low forward rise voltage V

•

Fast reverse recovery time t

•

TO-220D (Full-pack package) with high dielectric breakdown
voltage > 5.0 kV

•

Easy-to-mount, caused by its V cut lead end

F

rr

Unit : mm

9.9 ± 0.3

φ 3.2 ± 0.1

15.0 ± 0.513.7 ± 0.2

1.4 ± 0.2

4.2 ± 0.2

1.6 ± 0.2

0.8 ± 0.1

4.6 ± 0.2

2.9 ± 0.2

3.0 ± 0.5

2.6 ± 0.1

0.55 ± 0.15

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Repetitive peak reverse voltage

Non-repetitive peak reverse V

V

RRM

RSM

300 V

300 V

surge voltage

Average forward current I

Non-repetitive peak forward I

surge current

*

Junction temperature T

Storage temperature T

F(AV)

FSM

stg

−40 to +150 °C

j

−40 to +150 °C

Note) * : Half sine-wave; 10 ms/cycle

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Repetitive peak reverse current I

Forward voltage (DC) V

Reverse recovery time

*

Thermal resistance R

Note) 1. Rated input/output frequency: 10 MHz

2. Tightening torque-max. 8 kg × cm

3. * : trr measuring circuit

RRM1

I

RRM2

R

F

t

rr

th(j-c)

th(j-a)

2.54 ± 0.3

1

23

5.08 ± 0.5

1 : Anode
2 : Cathode
3 : Anode

TO-220D Package

10 A

60 A

V

= 300 V, TC = 25°C20µA

RRM

V

= 300 V, Tj = 150°C2mA

RRM

Internal Connection

IF = 5 A, TC = 25°C 0.98 V

IF = 1 A, IR = 1 A 50 ns

3 °C/W

63 °C/W

50 Ω

D.U.T

5.5 Ω

50 Ω

t

rr

I

F

0.1 × I

I

R

R

1

MA3D654

Fast Recovery Diodes (FRD)

IF  V

10

Ta = 150°C

1

)
A

(

−1

10

F

−2

10

−3

10

F

Forward current I

−4

10

−5

10

0 0.2 0.4 0.6 0.8 1.0 1.2

Forward voltage VF (V

IR  T

1 000

100

)
µA

(

R

10

1

Reverse current I

0.1

a

−20°C

100°C
25°C

)

VR = 300 V

100 V
10 V

VF  T

1.6

1.4

)

1.2

V
(

F

1.0

0.8

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160 200

a

Ambient temperature Ta (°C

Ct  V

600

500

)
pF

(

t

400

300

200

Terminal capacitance C

100

R

IF = 10 A

5 A

1 A

IR  V

2

10

10

Ta = 150°C

)
µA

(

1

R

−1

10

−2

10

R

100°C

25°C

Reverse current I

−3

10

−4

10

0 50 100 150 200 250 300

)

)
W

(

Average forward power P

Reverse voltage VR (V

24

20

D(AV)

16

12

8

4

P

D(AV)

 I

F(AV)

)

t

0

t

1

t0 / t1 = 1/6

1/3
1/2

DC

0.01

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

I

 T

12

)
A

10

(

F(AV)

8

6

4

2

Average forward current I

0

20 40 60 80 120 140100 160

F(AV)

t
t

0

1

t0 / t1 = 1/2

1/3

1/6

Case temperature TC (°C

2

0

)

C

DC

0 50 100 150 200 250 300

Reverse voltage VR (V

)

0

024681012

Average forward current I

F(AV)

(A

)

)