Panasonic MA3D650 Datasheet

Fast Recovery Diodes (FRD)

123

MA3D650

Silicon planar type (cathode common)

For high-frequency rectification

9.9 ± 0.3

4.6 ± 0.2

Unit : mm

2.9 ± 0.2

■ Features

•

Low forward rise voltage V

•

Fast reverse recovery time t

•

TO-220D (Full-pack package) with high dielectric breakdown

F

rr

voltage > 5.0 kV

•

Easy-to-mount, caused by its V cut lead end

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Repetitive peak reverse voltage

Non-repetitive peak reverse V

V

RRM

RSM

200 V

200 V

surge voltage

Average forward current I

Non-repetitive peak forward I

surge current

*

Junction temperature T

Storage temperature T

F(AV)

FSM

j

stg

10 A

60 A

−40 to +150 °C

−40 to +150 °C

Note) * : Half sine-wave; 10 ms/cycle

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Repetitive peak reverse current I

RRM1

I

RRM2

Forward voltage (DC) V

Reverse recovery time

Thermal resistance R

*

R

t

rr

th(j-c)

th(j-a)

Note) 1. Rated input/output frequency: 10 MHz

2. Tightening torque-max. 8 kg × cm

3. * : trr measuring circuit

V

= 200 V, TC = 25°C 100 µA

RRM

V

= 200 V, Tj = 150°C6mA

RRM

IF = 5 A, TC = 25°C 0.98 V

F

IF = 1 A, IR = 1 A 30 ns

φ 3.2 ± 0.1

15.0 ± 0.513.7 ± 0.2

1.4 ± 0.2

1

23

1.6 ± 0.2

0.8 ± 0.1

2.54 ± 0.3

5.08 ± 0.5

4.2 ± 0.2

Internal Connection

3.0 ± 0.5

2.6 ± 0.1

0.55 ± 0.15

1 : Anode 2 : Cathode 3 : Anode

TO-220D Package

3 °C/W

63 °C/W

50 Ω

D.U.T

5.5 Ω

50 Ω

t

rr

I

F

0.1 × I

I

R

R

1

MA3D650

Fast Recovery Diodes (FRD)

IF  V

100

10

)

A

(

F

1

0.1

Ta = 150°C

F

Forward current I

0.01

0.001 0 0.2 0.4 0.6 0.8 1.0 1.2

Forward voltage VF (V

IR  T

10 000

1 000

)

µA

(

R

100

10

Reverse current I

1

a

100°C 25°C

−20°C

)

VR = 200 V

100 V 10 V

VF  T

1.6

1.4

)

1.2

V (

F

1.0

0.8

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160 200

a

IF = 10 A

Ambient temperature Ta (°C

Ct  V

80

70

) pF

60

(

t

50

40

30

20

Terminal capacitance C

10

R

f = 1 MHz T

5 A

1 A

= 25°C

a

IR  V

 I

R

Ta = 150°C

F(AV)

t0 / t1 = 1/6

100°C

25°C

)

1/3 1/2 DC

t

0

t

1

10 000

1 000

)

µA

(

R

100

10

Reverse current I

1

0.1 0 20406080100120

)

) W

(

D(AV)

Average forward power P

Reverse voltage VR (V

P

30

25

20

15

10

5

D(AV)

0.1

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

I

 T

12

) A

10

(

F(AV)

8

6

4

2

Average forward current I

0

20 40 60 80 120 140100 160

F(AV)

t t

0

1

t0 / t1 = 1/2

1/6

Case temperature TC (°C

2

0

)

C

1/3

DC

0 50 100 150 200 250 300

Reverse voltage VR (V

)

0

024681012

Average forward current I

F(AV)

(A

)

)

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