Panasonic MA36132E User Manual

This product complies with RoHS Directive (EU 2002/95/EC).

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
Rs = 50 Ω

Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω

tp = 2 µs
tr = 0.35 ns
δ = 0.05

IF = 10 mA
VR = 6 V
RL = 100 Ω

10%

Input Pulse Output Pulse

I

rr

= 0.1 I

R

t

r

t

p

t

rr

V

R

I

F

t

t

A

Unit: mm

1: Anode 1
2: Anode 2
3: Cathode 1, 2 ML3-N2 Package

0.60±0.05

1.00±0.05

2

1

3

0.39

+0.01

−0.03

0.25±0.05

0.25±0.05

0.50±0.05

0.65±0.01

0.15±0.05

2

1

0.35±0.01

0.05±0.03

0.01±0.005

0.05±0.03

3

1

2

3

Switching Diodes

MA36132E

Silicon epitaxial planar type

For high speed switching circuits

 Features

 Two elements are contained in one package, optimum for high-density

mounting

 Short reverse recovery time t
 Small terminal capacitance C

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage V

Forward current I

Forward current (Average) I

Non-repetitive peak forward surge current

Junction temperature T

Storage temperature T

Note) *1: t = 1 s

2: Value for single diode

*

rr

t

R

RM

80 V

80 V

150

F

100

2

*

mA

340

FM

1

*

I

FSM

j

stg

2

*

225

750

2

*

500

150

–55 to +150

mA

Marking Symbol: A2

mA

Internal Connection

°C

°C

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward current V

Reverse voltage V

Reverse current I

Terminal capacitance C

*

Reverse recovery time

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 100 MHz.

3. *: trr measurement circuit

Publication date: September 2006 SKF00069AED 1

F

R

R

t

t

rr

IF = 100 mA 1.2 V

IR = 100 mA 80 V

VR = 75 V 100 nA

VR = 0, f = 1 MHz 2 pF

IF = 10 mA, VR = 6 V, Irr = 0.1 IR ,

RL = 100 W

3 ns

This product complies with RoHS Directive (EU 2002/95/EC).

0

0.2 0.4 0.6 1.20.8 1.0

10

−2

10

−1

1

10

10

3

10

2

MA36132E_ IF - V

F

Forward current I

F

(mA)

Forward voltage VF (V)

Ta = 150°C

100°C

25°C

−20°C

0

20 40 60 12080 10

1

10

10

2

10

3

10

5

10

4

MA36132E_ IR - V

R

Reverse current I

R

(nA)

Reverse voltage VR (V)

Ta = 150°C

100°C

25°C

−40

0 40 80 200120 160

0

0.4

0.8

1.6

1.2

MA36132E_ VF - T

a

Forward voltage V

F

(V)

Ambient temperature Ta (°C)

IF = 100 mA

10 mA

3 mA

−40

0 40 80 200120 160

1

10

10

2

10

3

10

5

10

4

MA36132E_ IR - T

a

Reverse current I

R

(nA)

Ambient temperature Ta (°C)

VR = 75 V

35 V

6 V

0

20 40 60 12080 10

0

0.2

0.4

0.6

1.2

0.8

1.0

MA36132E_

C

t

-

V

R

Terminal capacitance C

t

(pF)

Reverse voltage VR (V)

f = 1 MHz
Ta = 25°C

10

−1

1 10

10

−1

10

1

10

2

10

3

MA36132E_

I

F(surge)

-

t

W

Forward surge current I

F(surge)

(A)

Pulse width tW (ms)

t

W

Non repetitive

I

F(surge)

Ta = 25°C

MA36132E

IF  VF IR  VR VF  T

IR  Ta Ct  VR I

F(surge)

 t

a

W

2 SKF00069AED