Panasonic MA2ZV06 Datasheet

Variable Capacitance Diodes
MA2ZV06
Silicon epitaxial planar type
For VCO
INDICATES CATHODE
Unit : mm
0.4 ± 0.15
Features
Good linearity and large capacitance-ratio in C
Small series resistance r
S-mini type package, allowing downsizing of equipment and
VR relation
0.4 ± 0.15
automatic insertion through the taping package
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Junction temperature T
Storage temperature T
R
j
55 to +150 °C
stg
6V
150 °C
0.9 ± 0.1
Marking Symbol: 8C
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Diode capacitance C
Capacitance ratio
Series resistance
*
R
D(1V)
C
D(4V)
C
D(1V)/CD(4V)
r
D
Note) 1.Rated input/output frequency: 470 MHz
2*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 5 V 10 nA
VR = 1 V, f = 1 MHz 37.0 41.0 pF
VR = 4 V, f = 1 MHz 14.6 16.2 pF
VR = 4 V, f = 470 MHz 0.3
12
+ 0.1
1.7 ± 0.1
2.5 ± 0.2
0 to 0.05
S-Mini Type Package (2-pin)
0.050.16
0.3
+ 0.1
0.06
1 : Anode 2 : Cathode
2.40 2.70
1.25 ± 0.1
1
MA2ZV06
Variable Capacitance Diodes
100
CD V
50
)
30
pF (
D
20
10
5
3
Diode capacitance C
2
1
100
10
(nA)
R
1
0
16
12
8
4
Reverse voltage VR (V
IR T
R
f = 1 MHz T
= 25°C
a
)
mA (
F
120
100
IF V
F
25°C
80
60
40
Ta = 60°C
40°C
1.04 f = 1 MHz
1.03
1.02
) C
°
)
a
25
T
1.01
(
=
D
a
C
T (
D
C
1.00
CD T
VR = 1 V
a
4 V
Forward current I
20
28
24
20
40
32
36
)
a
VR = 5 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
)
0.99
0.98
0 20406080100
Ambient temperature Ta (°C)
0.1
Reverse current I
0.01 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
2
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