Panasonic MA2ZV05 Datasheet
Variable Capacitance Diodes
MA2ZV05
Silicon epitaxial planar type
For VCO
INDICATES
CATHODE
Unit : mm
0.4 ± 0.15
■ Features
•
Good linearity and large capacitance-ratio in C
•
Small series resistance r
•
S-mini type package, allowing downsizing of equipment and
D
VR relation
D
0.4 ± 0.15
automatic insertion through the taping package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Junction temperature T
Storage temperature T
R
j
−55 to +150 °C
stg
6V
150 °C
0.9 ± 0.1
Marking Symbol: 8B
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Diode capacitance C
Capacitance ratio
Series resistance
*
R
D(1V)
C
D(4V)
C
D(1V)/CD(4V)
r
D
Note) 1．Rated input/output frequency: 470 MHz
2．*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 5 V 10 nA
VR = 1 V, f = 1 MHz 18.5 20.5 pF
VR = 4 V, f = 1 MHz 3.6 4.1 pF
VR = 4 V, f = 470 MHz 0.65 Ω
12
+ 0.1
1.7 ± 0.1
2.5 ± 0.2
0 to 0.05
S-Mini Type Package (2-pin)
− 0.050.16
0.3
+ 0.1
− 0.06
1 : Anode
2 : Cathode
4.7
1.25 ± 0.1
1
MA2ZV05
Variable Capacitance Diodes
CD V
100
50
30
(pF)
20
D
10
5
3
Diode capacitance C
2
1
0
121620 24
4
8
Reverse voltage VR (V)
IR T
100
(nA)
R
10
1
R
28
a
f = 1 MHz
= 25°C
T
a
36
32
VR = 5 V
IF V
Ta = 60°C
F
25°C
− 40°C
)
1.05
f = 1 MHz
1.04
1.03
)
1.02
C
°
)
a
25
T
1.01
(
=
D
a
C
T
(
D
1.00
C
0.99
0.98
0.97
020406080 100
120
100
)
mA
(
80
F
60
40
Forward current I
20
40
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
CD T
a
VR = 1 V
2 V
4 V
Ambient temperature Ta (°C
)
Reverse current I
0.1
0.01
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
2
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