Panasonic MA2ZD14 Datasheet
Schottky Barrier Diodes (SBD)
MA2ZD14
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
•
S-mini type 2-pin package
•
Low forward rise voltage V
(VF < 0.4 V)
F
Unit : mm
KA
0.625
0.1
±
0.5
2
0.1
±
0.3
1
1.25
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward current I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
R
RRM
FM
FSM
j
stg
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
20 V
20 V
100 mA
300 mA
1A
125 °C
−55 to +125 °C
− 0.06
+ 0.1
0.16
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
S-Mini Type Package (2-pin)
Marking Symbol: 2N
Internal Connection
0.4 ± 0.1
1 : Anode
2 : Cathode
0.1
±
0.7
(non-repetitive)
21
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
W.F.Analyzer
(SAS-8130)
R
VR = 10 V 20 µA
IF = 5 mA 0.27 V
IF = 100 mA 0.40 V
VR = 0 V, f = 1 MHz 25 pF
t
IF = IR = 100 mA 3.0 ns
Irr = 10 mA, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
= 50 Ω
i
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA2ZD14
Schottky Barrier Diodes (SBD)
IF V
F
75°C
25°C
− 20°C
)
A
(
10
10
F
10
10
1
−1
Ta = 125°C
−2
−3
−4
Forward current I
−5
10
−6
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
IR V
−1
10
−2
10
)
A
(
R
−3
10
−4
10
Reverse current I
−5
10
−6
10
)
Ta = 125°C
0 5 10 15 20 25 30
Reverse voltage VR (V
R
75°C
25°C
)
2
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