Panasonic MA2ZD02 Datasheet
Schottky Barrier Diodes (SBD)
MA2ZD02
Silicon epitaxial planar type
For high-frequency rectification
■ Features
•
Mini package (S-mini type 2-pin)
•
Reverse current (DC value) V
is low
R
Unit : mm
KA
0.625
0.1
±
0.5
2
0.1
±
0.3
1
1.25
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
R
RRM
FSM
j
stg
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-
20 V
20 V
500 mA
3A
125 °C
−55 to +125 °C
+ 0.1
− 0.06
0.16
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
S-Mini Type Package (2-pin)
Marking Symbol: 2H
Internal Connection
0.4 ± 0.1
1 : Anode
2 : Cathode
0.1
±
0.7
repetitive)
21
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R1
I
R2
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R
= 50 Ω
s
W.F.Analyzer
(SAS-8130)
R
= 50 Ω
i
VR = 5 V 1 µA
VR = 10 V 10 µA
IF = 10 mA 0.3 0.4 V
IF = 500 mA 0.5 0.55 V
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
MA2ZD02
Schottky Barrier Diodes (SBD)
IF V
3
10
Ta = 125°C
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
− 20°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
a
VR = 20 V
10 V
6 V
3 V
Ambient temperature Ta (°C
75°C
25°C
)
VF T
Ct V
a
IF = 500 mA
50 mA
5 mA
)
R
Ta = 25°C
)
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
80
70
)
pF
60
(
t
50
40
30
20
Terminal capacitance C
10
0
)
0 5 10 15 20 25 30
Reverse voltage VR (V
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.1
IR V
R
Ta = 125°C
75°C
25°C
Reverse voltage VR (V
I
t
F(surge)
0.3 3 30 100101
W
Ta = 25°C
t
W
Breakdown point (typ.)
Pulse width tW (ms
I
)
)
F(surge)
2
Loading...